- Patent Title: Integrated semiconductor devices and method of fabricating the same
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Application No.: US15970618Application Date: 2018-05-03
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Publication No.: US10546852B2Publication Date: 2020-01-28
- Inventor: Ranadeep Dutta , Matthew Michael Nowak
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Main IPC: H01L29/22
- IPC: H01L29/22 ; H01L27/06 ; H01L27/092 ; H01L21/8249 ; H01L29/93 ; H01L29/205 ; H01L29/737

Abstract:
A semiconductor device comprises a complementary metal oxide semiconductor (CMOS) device and a heterojunction bipolar transistor (HBT) integrated on a single die. The CMOS device may comprise silicon. The HBT may comprise III-V materials. The semiconductor device may be employed in a radio frequency front end (RFFE) module to reduce size and parasitics of the RFFE module and to provide cost and cycle time savings.
Public/Granted literature
- US20190341381A1 INTEGRATED SEMICONDUCTOR DEVICES AND METHOD OF FABRICATING THE SAME Public/Granted day:2019-11-07
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