At least one latch of a page buffer of a nonvolatile memory device includes a capacitor that selectively stores a voltage of a sensing node. The capacitor includes at least one first contact having a second height corresponding to a first height of each of cell strings, and at least one second contact to which a ground voltage is supplied. The at least one second contact has a third height corresponding to the first height, disposed adjacent to the at least one first contact, and electrically separated from the at least one first contact.