Invention Grant
- Patent Title: Trench MOS device with improved single event burn-out endurance
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Application No.: US15774291Application Date: 2016-09-17
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Publication No.: US10546951B2Publication Date: 2020-01-28
- Inventor: Min Ren , Yuci Lin , Chi Xie , Zhiheng Su , Zehong Li , Jinping Zhang , Wei Gao , Bo Zhang
- Applicant: University of Electronic Science and Technology of China , Institute of Electronic and Information Engineering of UESTC in Guangdong
- Applicant Address: CN Chengdu CN Dongguan
- Assignee: University of Electronic Science and Technology of China,Institute of Electronic and Information Engineering of UESTC in Guangdong
- Current Assignee: University of Electronic Science and Technology of China,Institute of Electronic and Information Engineering of UESTC in Guangdong
- Current Assignee Address: CN Chengdu CN Dongguan
- Agent Gokalp Bayramoglu
- International Application: PCT/CN2016/099165 WO 20160917
- International Announcement: WO2018/049641 WO 20180322
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423
Abstract:
A trench MOS device with improved single event burnout endurance, applied in the field of semiconductor. The device is provided, in an epitaxial layer, with a conductive type semiconductor pillar connected to a source and a second conductive type current-directing region. Whereby, the trajectory of the electron-hole pairs induced by the single event effect is changed and thus avoids the single event burnout caused by the triggering of parasitic transistors, therefore improving the endurance of the single event burnout of the trench MOS device.
Public/Granted literature
- US20190371937A1 TRENCH MOS DEVICE WITH IMPROVED SINGLE EVENT BURN-OUT ENDURANCE Public/Granted day:2019-12-05
Information query
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