Disclosed herein is a metrology method, and an associated metrology apparatus, the metrology method includes measuring a target formed in at least two layers on a substrate by a lithographic process and capturing at least one corresponding pair of non-zeroth diffraction orders, for example in an image field, to obtain measurement data. A simulation of a measurement of the target as defined in terms of geometric parameters of the target, the geometric parameters including one or more variable geometric parameters, is performed and a difference between the measurement data and simulation data is minimized, so as to directly reconstruct a value for each of the one or more variable geometric parameters.