公开(公告)号：US10585048B2

公开(公告)日：2020-03-10

申请号：US16385651

申请日：2019-04-16

Applicant: ASML NETHERLANDS B.V.

Inventor： Samee Ur Rehman ,  Anagnostis Tsiatmas ,  Sergey Tarabrin ,  Joannes Jitse Venselaar ,  Alexandru Onose ,  Mariya Vyacheslavivna Medvedyeva

IPC: G03F7/20 ,  G01N21/95 ,  G01N21/956 ,  G03F9/00

Abstract: Methods of determining a value of a parameter of interest are disclosed. In one arrangement, a symmetric component and an asymmetric component of a detected pupil representation from illuminating a target are derived. A first metric characterizing the symmetric component and a second metric characterizing the asymmetric component vary non-monotonically as a function of the parameter of interest over a reference range of values of the parameter of interest. A combination of the derived symmetric component and the derived asymmetric component are used to identify a correct value from a plurality of candidate values of the parameter of interest.

公开(公告)号：US10310389B2

公开(公告)日：2019-06-04

申请号：US15942423

申请日：2018-03-30

Applicant: ASML NETHERLANDS B.V.

Inventor： Nitesh Pandey ,  Jin Lian ,  Samee Ur Rehman ,  Martin Jacobus Johan Jak

IPC: G01N21/00 ,  G03F7/20 ,  G01B11/02

Abstract: Methods and apparatuses for measuring a plurality of structures formed on a substrate are disclosed. In one arrangement, a method includes obtaining data from a first measurement process. The first measurement process including individually measuring each of the plurality of structures to measure a first property of the structure. A second measurement process is used to measure a second property of each of the plurality of structures. The second measurement process includes illuminating each structure with radiation having a radiation property that is individually selected for that structure using the measured first property for the structure.

公开(公告)号：US11022897B2

公开(公告)日：2021-06-01

申请号：US16194769

申请日：2018-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse Venselaar ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G01D1/00 ,  G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US10551172B2

公开(公告)日：2020-02-04

申请号：US15873880

申请日：2018-01-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Samee Ur Rehman

IPC: G01B11/24 ,  G03F7/20 ,  G01B11/30 ,  G01N21/956

Abstract: Disclosed herein is a metrology method, and an associated metrology apparatus, the metrology method includes measuring a target formed in at least two layers on a substrate by a lithographic process and capturing at least one corresponding pair of non-zeroth diffraction orders, for example in an image field, to obtain measurement data. A simulation of a measurement of the target as defined in terms of geometric parameters of the target, the geometric parameters including one or more variable geometric parameters, is performed and a difference between the measurement data and simulation data is minimized, so as to directly reconstruct a value for each of the one or more variable geometric parameters.

公开(公告)号：US20190243253A1

公开(公告)日：2019-08-08

申请号：US16256359

申请日：2019-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Anagnostis TSIATMAS ,  Joannes Jitse Venselaar ,  Samee Ur Rehman ,  Mariya Vyacheslavivna Medvedyeva ,  Bastiaan Onne Fagginger Auer ,  Martijn Maria Zaal ,  Thaleia Kontoroupi

IPC: G03F7/20

CPC classification number: G03F7/70091 ,  G03F7/705 ,  G03F7/70508 ,  G03F7/70633 ,  G03F7/70641

Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.

公开(公告)号：US12032299B2

公开(公告)日：2024-07-09

申请号：US17784566

申请日：2020-12-03

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Patricius Aloysius Jacobus Tinnemans ,  Igor Matheus Petronella Aarts ,  Kaustuve Bhattacharyya ,  Ralph Brinkhof ,  Leendert Jan Karssemeijer ,  Stefan Carolus Jacobus Antonius Keij ,  Haico Victor Kok ,  Simon Gijsbert Josephus Mathijssen ,  Henricus Johannes Lambertus Megens ,  Samee Ur Rehman

IPC: G03F7/00 ,  G03F9/00

CPC classification number: G03F7/70633 ,  G03F7/706837 ,  G03F9/7034 ,  G03F9/7092

Abstract: A metrology method relating to measurement of a structure on a substrate, the structure being subject to one or more asymmetric deviation. The method includes obtaining at least one intensity asymmetry value relating to the one or more asymmetric deviations, wherein the at least one intensity asymmetry value includes a metric related to a difference or imbalance between the respective intensities or amplitudes of at least two diffraction orders of radiation diffracted by the structure; determining at least one phase offset value corresponding to the one or more asymmetric deviations based on the at least one intensity asymmetry value; and determining one or more measurement corrections for the one or more asymmetric deviations from the at least one phase offset value.

公开(公告)号：US10585354B2

公开(公告)日：2020-03-10

申请号：US16256359

申请日：2019-01-24

Applicant: ASML NETHERLANDS B.V.

Inventor： Anagnostis Tsiatmas ,  Joannes Jitse Venselaar ,  Samee Ur Rehman ,  Mariya Vyacheslavivna Medvedyeva ,  Bastiaan Onne Fagginger Auer ,  Martijn Maria Zaal ,  Thaleia Kontoroupi

IPC: G03F7/20

Abstract: Methods of optimizing a metrology process are disclosed. In one arrangement, measurement data from a plurality of applications of the metrology process to a first target on a substrate are obtained. Each application of the metrology process includes illuminating the first target with a radiation spot and detecting radiation redirected by the first target. The applications of the metrology process include applications at a) plural positions of the radiation spot relative to the first target, and/or b) plural focus heights of the radiation spot. The measurement data includes, for each application of the metrology process, a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method includes determining an optimal alignment and/or an optimal focus height based on comparisons between the detected pupil representations in the measurement data and a reference pupil representation.

公开(公告)号：US20190171115A1

公开(公告)日：2019-06-06

申请号：US16194769

申请日：2018-11-19

Applicant: ASML NETHERLANDS B.V.

Inventor： Joannes Jitse VENSELAAR ,  Anagnostis Tsiatmas ,  Samee Ur Rehman ,  Paul Christiaan Hinnen ,  Jean-Pierre Agnes Henricus Marie Vaessen ,  Nicolas Mauricio Weiss ,  Gonzalo Roberto Sanguinetti ,  Thomai Zacharopoulou ,  Martijn Maria Zaal

IPC: G03F7/20 ,  G06F17/12

Abstract: Methods of determining information about a patterning process. In a method, measurement data from a metrology process applied to each of a plurality of metrology targets on a substrate is obtained. The measurement data for each metrology target includes at least a first contribution and a second contribution. The first contribution is from a parameter of interest of a patterning process used to form the metrology target. The second contribution is from an error in the metrology process. The method further includes using the obtained measurement data from all of the plurality of metrology targets to obtain information about an error in the metrology process, and using the obtained information about the error in the metrology process to extract a value of the parameter of interest for each metrology target.

公开(公告)号：US12189305B2

公开(公告)日：2025-01-07

申请号：US18004555

申请日：2021-05-27

Applicant: ASML Netherlands B.V.

Inventor： Simon Gijsbert Josephus Mathijssen ,  Patricius Aloysius Jacobus Tinnemans ,  Arie Jeffrey Den Boef ,  Kaustuve Bhattacharyya ,  Samee Ur Rehman

IPC: G03F7/00 ,  G03F9/00

Abstract: Disclosed is a method of improving a measurement of a parameter of interest. The method comprises obtaining metrology data comprising a plurality of measured values of the parameter of interest, relating to one or more targets on a substrate, each measured value relating to a different measurement combination of a target of said one or more targets and a measurement condition used to measure that target and asymmetry metric data relating to asymmetry for said one or more targets. A respective relationship is determined for each of said measurement combinations relating a true value for the parameter of interest to the asymmetry metric data, based on an assumption that there is a common true value for the parameter of interest over said measurement combinations. These relationships are used to improve a measurement of the parameter of interest.

公开(公告)号：US11754931B2

公开(公告)日：2023-09-12

申请号：US17603870

申请日：2020-03-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy Werkman ,  David Frans Simon Deckers ,  Simon Philip Spencer Hastings ,  Jeffrey Thomas Ziebarth ,  Samee Ur Rehman ,  Davit Harutyunyan ,  Chenxi Lin ,  Yana Cheng

IPC: G03F1/36 ,  G03F7/00

CPC classification number: G03F7/705 ,  G03F1/36 ,  G03F7/70508 ,  G03F7/70616

Abstract: A method for determining a correction for an apparatus used in a process of patterning substrates, the method including: obtaining a group structure associated with a processing history and/or similarity in fingerprint of to be processed substrates; obtaining metrology data associated with a plurality of groups within the group structure, wherein the metrology data is correlated between the groups; and determining the correction for a group out of the plurality of groups by applying a model to the metrology data, the model including at least a group-specific correction component and a common correction component.