Invention Grant
- Patent Title: Morphable ECC encoder/decoder for NVDIMM over DDR channel
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Application No.: US15675679Application Date: 2017-08-11
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Publication No.: US10552256B2Publication Date: 2020-02-04
- Inventor: Dimin Niu , Mu-Tien Chang , Hongzhong Zheng
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Main IPC: G06F11/10
- IPC: G06F11/10 ; G06F11/00 ; G06F13/00 ; G06F13/42

Abstract:
A hardware coding mechanism is described. The coding mechanism may include a first encoder to produce a first code using a base number of bits and a second encoder to produce a second code using a supplementary number of bits. The second code and the first code together may be stronger than the first code alone. A mode register stored in a storage may specify whether a switch to the second encoder is open or closed: the first coder is always used.
Public/Granted literature
- US20180322007A1 MORPHABLE ECC ENCODER/DECODER FOR NVDIMM OVER DDR CHANNEL Public/Granted day:2018-11-08
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