Invention Grant
- Patent Title: Temperature control system, semiconductor manufacturing device, and temperature control method
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Application No.: US15988128Application Date: 2018-05-24
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Publication No.: US10553463B2Publication Date: 2020-02-04
- Inventor: Atsushi Kobayashi , Atsuhiko Tabuchi , Hideki Wakai , Kazutoshi Itoh , Yasuhisa Hirose , Keiichi Nishikawa , Takahiro Minatani
- Applicant: Tokyo Electron Limited , CKD Corporation
- Applicant Address: JP Tokyo JP Aichi
- Assignee: Tokyo Electron Limited,CKD Corporation
- Current Assignee: Tokyo Electron Limited,CKD Corporation
- Current Assignee Address: JP Tokyo JP Aichi
- Agency: IPUSA, PLLC
- Priority: JP2011-249360 20111115
- Main IPC: H01L21/67
- IPC: H01L21/67 ; H01L21/683 ; H01L21/66

Abstract:
A temperature control system includes a first temperature adjustment unit storing fluid at a first temperature; a second temperature adjustment unit storing fluid at a second temperature higher than the first temperature; a low-temperature flow path for passing fluid supplied from the first temperature adjustment unit; a high-temperature flow path for passing fluid supplied from the second temperature adjustment unit; a bypass flow path for circulating fluid; a combination flow path for passing fluid from the low-temperature flow path, the high-temperature flow path, and the bypass flow path merged at a merging part; a temperature adjustment part that passes fluid from the combination flow path and cools/heats a member of a semiconductor manufacturing device; and a control device that controls valve positions of variable valves attached to the three flow paths upstream of the merging part and adjusts the flow rate distribution ratio for the three flow paths.
Public/Granted literature
- US20180269090A1 TEMPERATURE CONTROL SYSTEM, SEMICONDUCTOR MANUFACTURING DEVICE, AND TEMPERATURE CONTROL METHOD Public/Granted day:2018-09-20
Information query
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