Interconnects containing serpentine line structures for three-dimensional memory devices and methods of making the same
Abstract:
A device structure includes an array of semiconductor devices located in an array region over a substrate, metal lines laterally extending from the device region to a peripheral interconnection region, and interconnect via structures located in the peripheral interconnection region, and contacting a portion of a respective one of the plurality of metal lines. The metal lines include a first metal line and a second metal line each having a serpentine region which contacts a respective interconnect via structure.
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