Invention Grant
- Patent Title: Layout of semiconductor device, semiconductor device and method of forming the same
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Application No.: US15951129Application Date: 2018-04-11
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Publication No.: US10553577B2Publication Date: 2020-02-04
- Inventor: Yu-Cheng Tung
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW107105370A 20180213
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/11 ; H01L29/66 ; H01L29/78 ; H01L21/8238

Abstract:
A layout of a semiconductor device, a semiconductor device and a method of forming the same, the semiconductor device include a first fin and a second fin disposed on a substrate, a gate and a spacer. The first fin and the second fin both include two opposite edges, and the gate completely covers the two opposite edges of the first fin and only covers one sidewall of the two opposite edges of the second fin. The spacer is disposed at two sides of the gate, and the spacer covers another sidewall of the two opposite edges of the second fin.
Public/Granted literature
- US20190252366A1 LAYOUT OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2019-08-15
Information query
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