Invention Grant
- Patent Title: Method for forming doped extension regions in a structure having superimposed nanowires
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Application No.: US16054524Application Date: 2018-08-03
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Publication No.: US10553723B2Publication Date: 2020-02-04
- Inventor: Remi Coquand , Nicolas Loubet , Shay Reboh , Robin Chao
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: FR Paris US NY Yorktown Heights
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: FR Paris US NY Yorktown Heights
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1757673 20170811
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/161 ; H01L21/225 ; H01L21/324 ; H01L21/8238 ; H01L29/167 ; H01L29/66
Abstract:
A method is provided of fabricating a microelectronic device including a semiconductor structure provided with semiconductor bars positioned above one another, the method including the following steps: creating, on a substrate, a stacked structure including an alternation of first bars containing a first material and having a first critical dimension and second bars containing a second material, the second material being a semiconductor, the second bars having a second critical dimension greater than the first critical dimension, then, surface doping protruding lateral portions of the second bars before forming a source and drain block on the portions.
Public/Granted literature
- US20190051744A1 METHOD FOR FORMING DOPED EXTENSION REGIONS IN A STRUCTURE HAVING SUPERIMPOSED NANOWIRES Public/Granted day:2019-02-14
Information query
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