- 专利标题: CdTe-based compound single crystal and method for producing the same
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申请号: US15859955申请日: 2018-01-02
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公开(公告)号: US10557215B2公开(公告)日: 2020-02-11
- 发明人: Kouji Murakami , Akira Noda
- 申请人: JX NIPPON MINING & METALS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: JX NIPPON MINING & METALS CORPORATION
- 当前专利权人: JX NIPPON MINING & METALS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Hauptman Ham, LLP
- 优先权: JP2015-134716 20150703
- 主分类号: C30B29/48
- IPC分类号: C30B29/48 ; C30B33/02 ; C01B19/04 ; C30B11/02
摘要:
Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×107 Ωcm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 μm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.