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公开(公告)号：US11313050B2
公开(公告)日：2022-04-26
申请号：US16335405
申请日：2018-07-03
摘要： An indium phosphide single-crystal body has an oxygen concentration of less than 1×1016 atoms·cm−3, and includes a straight body portion having a cylindrical shape, wherein a diameter of the straight body portion is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm. An indium phosphide single-crystal substrate has an oxygen concentration of less than 1×1016 atoms·cm−13, wherein a diameter of the indium phosphide single-crystal substrate is more than or equal to 100 mm and less than or equal to 150 mm or is more than 100 mm and less than or equal to 150 mm.
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公开(公告)号：US11142689B2
公开(公告)日：2021-10-12
申请号：US16619401
申请日：2018-04-13
申请人： SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES , R&D CENTER, SHANGHAI INSTITUTE OF CERAMICS
发明人： Junfeng Chen , Yong Du , Shaohua Wang , Shiyun Sun , Xuenong Zhou , Xiang Li
IPC分类号： C09K11/77 , C30B11/02 , C30B28/06 , C30B29/12 , G01T1/20 , G01T1/202 , C30B15/04 , C30B28/10
摘要： Disclosed are a yttrium-doped barium fluoride crystal and a preparation method and the use thereof, wherein the yttrium-doped barium fluoride crystal has a chemical composition of Ba(1−x)YxF2+x, in which 0.01≤x≤0.50. The yttrium-doped BaF2 crystal of the present invention has improved scintillation performance. The yttrium doping may greatly suppress the slow luminescence component of the BaF2 crystal and has an excellent fast/slow scintillation component ratio. The doped crystal is coupled to an optical detector to obtain a scintillation probe which is applicable to the fields of high time resolved measurement radiation such as high-energy physics, nuclear physics, ultrafast imaging and nuclear medicine imaging.
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公开(公告)号：US20210301421A1
公开(公告)日：2021-09-30
申请号：US17263149
申请日：2019-07-24
发明人： Masatake NAGAYA , Takahiro KANDA , Takeshi OKAMOTO , Satoshi TORIMI , Satoru NOGAMI , Makoto KITABATAKE
摘要： An object is to provide a SiC wafer in which a detection rate of an optical sensor can improved and a SiC wafer manufacturing method.
The method includes: a satin finishing process S141 of satin-finishing at least a back surface 22 of a SiC wafer 20; an etching process 21 of etching at least the back surface 22 of the SiC wafer 20 by heating under Si vapor pressure after the satin finishing process S141; and a mirror surface processing process S31 of mirror-processing a main surface 21 of the SiC wafer 20 after the etching process S21. Accordingly, it is possible to obtain a SiC wafer having the mirror-finished main surface 21 and the satin-finished back surface 22.-
4.发明授权公开(公告)号：US10934633B2
公开(公告)日：2021-03-02
申请号：US15119143
申请日：2015-02-20
发明人： Zhong-Hao Lu , Rohit Arun Bhosale , Jacqueline M. More , Sudarshan Natarajan , Joseph Patrick Reyes
摘要： A heater comprises a plurality of zones with at least two zones having a variable power density gradient different from one another. The heater having zones of different variable power density gradients allows for controlling the heat output and temperature profile of the heater in one or more directions of the heater. The heater can be used, for example, to control the temperature profile in a vertical direction.
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公开(公告)号：US20200148948A1
公开(公告)日：2020-05-14
申请号：US16619401
申请日：2018-04-13
申请人： SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES , R&D CENTER, SHANGHAI INSTITUTE OF CERAMICS
发明人： Junfeng CHEN , Yong DU , Shaohua WANG , Shiyun SUN , Xuenong ZHOU , Xiang LI
IPC分类号： C09K11/77 , G01T1/202 , C30B28/06 , G01T1/20 , C30B29/12 , C30B11/02 , C30B28/10 , C30B15/04
摘要： Disclosed are a yttrium-doped barium fluoride crystal and a preparation method and the use thereof, wherein the yttrium-doped barium fluoride crystal has a chemical composition of Ba(1−x)YxF2+x, in which 0.01≤x≤0.50. The yttrium-doped BaF2 crystal of the present invention has improved scintillation performance. The yttrium doping may greatly suppress the slow luminescence component of the BaF2 crystal and has an excellent fast/slow scintillation component ratio. The doped crystal is coupled to an optical detector to obtain a scintillation probe which is applicable to the fields of high time resolved measurement radiation such as high-energy physics, nuclear physics, ultrafast imaging and nuclear medicine imaging.
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公开(公告)号：US10598800B2
公开(公告)日：2020-03-24
申请号：US16206545
申请日：2018-11-30
IPC分类号： H05B33/00 , G01T1/202 , C30B11/00 , C30B15/00 , C30B29/12 , C09K11/77 , C30B11/02 , C30B11/04 , C30B15/04 , G01T1/20
摘要： The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.
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公开(公告)号：US10557215B2
公开(公告)日：2020-02-11
申请号：US15859955
申请日：2018-01-02
发明人： Kouji Murakami , Akira Noda
摘要： Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 μm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×107 Ωcm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 μm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.
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公开(公告)号：US10538861B1
公开(公告)日：2020-01-21
申请号：US14608665
申请日：2015-01-29
发明人： Kanai S. Shah , Josh Tower , Rastgo Hawrami
摘要： Disclosed embodiments are related to a method of forming an elpasolite scintillator. In one nonlimiting embodiment, a method of forming an elpasolite scinitillator may comprise forming an elpasolite crystal from a nonstoichiometric melt.
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公开(公告)号：US20190107636A1
公开(公告)日：2019-04-11
申请号：US16206545
申请日：2018-11-30
IPC分类号： G01T1/202 , C30B15/04 , C30B11/04 , C30B11/02 , C30B11/00 , C09K11/77 , C30B29/12 , C30B15/00
CPC分类号： G01T1/2023 , C09K11/77 , C09K11/7766 , C09K11/7773 , C30B11/00 , C30B11/02 , C30B11/04 , C30B15/00 , C30B15/04 , C30B29/12 , G01T1/20 , G01T1/202
摘要： The present disclosure relates to a process for fabricating a crystalline scintillator material with a structure of elpasolite type of theoretical composition A2BC(1-y)MyX(6-y) wherein: A is chosen from among Cs, Rb, K, Na, B is chosen from among Li, K, Na, C is chosen from among the rare earths, Al, Ga, M is chosen from among the alkaline earths, X is chosen from among F, Cl, Br, I, y representing the atomic fraction of substitution of C by M and being in the range extending from 0 to 0.05, comprising its crystallization by cooling from a melt bath comprising r moles of A and s moles of B, the melt bath in contact with the material containing A and B in such a way that 2s/r is above 1. The process shows an improved fabrication yield. Moreover, the crystals obtained can have compositions closer to stoichiometry and have improved scintillation properties.
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公开(公告)号：US10138572B2
公开(公告)日：2018-11-27
申请号：US15070610
申请日：2016-03-15
发明人： Sung-Lin Hsu , Cheng-Jui Yang , Pei-Kai Huang , Sheng-Hua Ni , Yu-Min Yang , Ming-Kung Hsiao , Wen-Huai Yu , Ching-Shan Lin , Wen-Ching Hsu , Chung-Wen Lan
摘要： A crystalline silicon ingot and a method of fabricating the same are disclosed. The crystalline silicon ingot of the invention includes multiple silicon crystal grains growing in a vertical direction of the crystalline silicon ingot. The crystalline silicon ingot has a bottom with a silicon crystal grain having a first average crystal grain size of less than about 12 mm. The crystalline silicon ingot has an upper portion, which is about 250 mm away from said bottom, with a silicon crystal grain having a second average crystal grain size of greater than about 14 mm.
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