公开(公告)号：US20240401225A1

公开(公告)日：2024-12-05

申请号：US18380453

申请日：2023-10-16

Applicant: Dalian University of Technology ,  NingBo Inst. of Dalian University of Technology

Inventor： Huijun KANG ,  Rongchun CHEN ,  Tongmin WANG ,  Enyu GUO ,  Zongning CHEN ,  Tingju LI ,  Zhiqiang CAO ,  Yiping LU ,  Jinchuan JIE ,  Yubo ZHANG

IPC: C30B11/02 ,  C30B11/00 ,  C30B29/52

Abstract: Provided are a P-type ZrCoSb-based half-Heusler single crystal alloy and a preparation method thereof. The method for preparing the P-type ZrCoSb-based half-Heusler single crystal alloy includes: subjecting alloy raw materials to smelting under a first protective atmosphere to obtain a half-Heusler polycrystalline alloy ingot, the alloy raw materials corresponding to a chemical composition of the P-type ZrCoSb-based half-Heusler single crystal alloy; and subjecting the half-Heusler polycrystalline alloy ingot to vertical Bridgman directional crystallization under a second protective atmosphere to obtain the P-type ZrCoSb-based half-Heusler single crystal alloy. The P-type ZrCoSb-based half-Heusler single crystal alloy has the chemical composition of ZrCoSb1-xSnx, x in the ZrCoSb1-xSnx being in a range of 0.1≤x≤0.3; and the P-type ZrCoSb-based half-Heusler single crystal alloy has an MgAgAs-type crystal structure.

公开(公告)号：US11591712B2

公开(公告)日：2023-02-28

申请号：US16424987

申请日：2019-05-29

Applicant: Forschungsverbund Berlin e.V. ,  Cornell University

Inventor： Christo Guguschev ,  Mario Brutzam ,  Darrell Schlom ,  Hanjong Paik

IPC: C30B15/14 ,  C30B15/10 ,  C30B29/68 ,  C30B29/22 ,  C30B11/00 ,  C30B11/02 ,  C30B29/64 ,  C30B29/30

Abstract: The invention relates to a method for growing a bulk single crystal, wherein the method comprises the steps of inserting a starting material into a crucible, melting the starting material in the crucible by heating the starting material, arranging a thermal insulation lid at a distance above a melt surface of said melt such that at least a central part of the melt surface is covered by the lid, and growing the bulk single crystal from the melt by controllably cooling the melt with the thermal insulation lid arranged above the melt surface.

公开(公告)号：US20230002927A1

公开(公告)日：2023-01-05

申请号：US17732021

申请日：2022-04-28

Applicant: CHINA JILIANG UNIVERSITY

Inventor： Qinhua Wei ,  Peng Xiang ,  Laishun Qin

IPC: C30B11/02 ,  C30B11/00 ,  G01T3/06

Abstract: Disclosed are a Li+ doped metal halide scintillation crystal with a zero-dimensional perovskite structure, a preparation method and use thereof. The scintillation crystal has a chemical formula of Cs3-xCu2I5:xLi, where x is in a range of 0.003 to 0.3. The method for preparing the scintillation crystal comprises the steps of: weighting and fully mixing a CuI powder, a CsI powder and a LiI powder in a molar ratio of 2:(3-x):x in an inert atmosphere to obtain a mixed powder, and growing into the scintillation crystal from the mixed powder by Bridgman Stockbarger method. After excited, the scintillation crystal could emit a broadband blue light in a range of 350-550 nm, with an intensity much higher than that of the original pure component crystal. The existence of Li+ further expands the application of the scintillation crystals from X/γ-ray detection to neutron detection.

公开(公告)号：US20220372368A1

公开(公告)日：2022-11-24

申请号：US17441927

申请日：2020-10-30

Applicant: GRIREM ADVANCED MATERIALS CO., LTD. ,  Rare Earth Functional Materials (Xiong 'an) Innovation Center Co., Ltd. ,  GUOKE RE ADVANCED MATERIALS CO., LTD

Inventor： Jinqiu YU ,  Liang LUO ,  Chengpeng DIAO ,  Lei CUI ,  Hao WU ,  Huaqiang HE

IPC: C09K11/77 ,  C30B29/12 ,  C30B11/02 ,  C01F17/253 ,  G01T1/202 ,  G01T1/36

Abstract: The present invention relates to a rare earth halide scintillating material. The material has a general chemical formula La1-xCexBr3+y, wherein 0.001x1, and 0.0001y0.1. The rare earth halide scintillating material involved in the present invention has excellent scintillation properties of high light output, high energy resolution, and fast decay.

公开(公告)号：US11136692B2

公开(公告)日：2021-10-05

申请号：US16967119

申请日：2018-02-12

Applicant: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xun Shi ,  Ruiheng Liu ,  Feng Hao ,  Tuo Wang

IPC: C30B29/46 ,  C01B19/00 ,  C30B11/02 ,  C30B11/10 ,  C30B28/02 ,  C30B33/02 ,  H01L29/24

Abstract: Disclosed is a plastic semiconductor material and a preparation method thereof. The semiconductor material comprises an argentite-based compound represented by the following formula (I): Ag2-δXδS1-ηYη(I), in which 0≤δ

公开(公告)号：US10512959B2

公开(公告)日：2019-12-24

申请号：US15306583

申请日：2015-03-23

Applicant: PUSAN NATIONAL UNIVERSITY INDUSTRIAL—UNIVERSITY COOPERATION FOUNDATION

Inventor： Se-young Jeong ,  Sang-eon Park ,  Seung-hun Lee ,  Seung Jeong ,  Hoon-chul Yang

IPC: B21C1/00 ,  C30B15/00 ,  C30B11/00 ,  C30B29/02 ,  C30B33/00 ,  C30B11/02 ,  C30B29/64 ,  B21C1/08 ,  B22F1/00

Abstract: A method for manufacturing an ultrafine single-crystalline metal wire is presented. The method continuously manufactures an ultrafine long single-crystalline wire by shaping a grown single-crystalline metal to have a circular or rectangular cross section and then by drawing the shape-processed single-crystalline metal using a drawing machine. Therefore, the method simplifies manufacturing procedures to reduce manufacturing costs and lowers electrical resistance of a produced metal wire to improve the quality of the produced metal wire. The method includes: a first step of growing a single-crystalline metal ingot using a Czochralski or a Bridgman method; a second step of subjecting the single-crystalline metal ingot to a shaping process such that the single-crystalline metal ingot has a certain shape; and a third step of completing the manufacture of an ultrafine single-crystalline metal wire by drawing the shape-processed single-crystalline metal.

公开(公告)号：US10227711B2

公开(公告)日：2019-03-12

申请号：US15357707

申请日：2016-11-21

Applicant: JIANG XI SAI WEI LDK SOLAR HI-TECH CO., LTD.

Inventor： Dongli Hu ,  Liang He ,  Yuepeng Wan ,  Qi Lei ,  Hongrong Chen ,  Tao Zhang ,  Dejing Zhong

IPC: C30B11/00 ,  C30B11/02 ,  C30B11/04 ,  C30B11/14 ,  C30B28/06 ,  C30B29/06 ,  H01L29/04 ,  H01L29/16 ,  H01L31/0368

Abstract: Disclosed is a method for preparing polycrystalline silicon ingot. The preparation method comprises: coating inner wall of the crucible with a layer of silicon nitride, followed by laying a layer of crushed silicon and feeding silicon in the crucible; the crushed silicon is laid in random order, and the layer of crushed silicon forms a supporting structure having numerous holes; melting the silicon to form molten silicon by heating, when solid-liquid interface reach the surface of the layer of crushed silicon or when the layer of crushed silicon melt partially, regulating thermal field to achieve supercooled state to grow crystals; after the crystallization of molten silicon is completely finished, performing annealing and cooling to obtain polycrystalline silicon ingot. By adopting the preparation method, a desirable initial nucleus can be obtained for a polycrystalline silicon ingot, so as to reduce dislocation multiplication during the growth of the polycrystalline silicon ingot.

公开(公告)号：US09982361B2

公开(公告)日：2018-05-29

申请号：US14348792

申请日：2012-07-17

Applicant: Carl Chartier

Inventor： Carl Chartier

IPC: C30B11/00 ,  C30B29/06 ,  C30B11/02 ,  F28D15/00 ,  F28F13/00

CPC classification number: C30B11/003 ,  C30B11/002 ,  C30B11/007 ,  C30B11/02 ,  C30B29/06 ,  F28D15/00 ,  F28F13/00

Abstract: A crystal growth furnace comprising a crucible containing at least feedstock material and a liquid-cooled heat exchanger that is vertically movable beneath the crucible to extract heat from it to promote the growth of a crystalline ingot is disclosed. The liquid-cooled heat exchanger comprises a heat extraction bulb made of high thermal conductivity material that is vertically movable into thermal communication with the crucible to extract heat from the crucible using a liquid coolant. A liquid-cooled heat exchanger enclosed in a sealed tubular outer jacket is also disclosed as is a method for producing a crystalline ingot using a vertically movable liquid-cooled heat exchanger.

公开(公告)号：US09803291B2

公开(公告)日：2017-10-31

申请号：US14430591

申请日：2013-09-12

Applicant: A.L.M.T. Corp.

Inventor： Masahiro Katoh ,  Makoto Watanabe

IPC: C30B11/02 ,  C30B11/00 ,  C30B29/20 ,  C30B35/00 ,  C23C4/02 ,  C23C4/08 ,  C23C4/12 ,  C23C4/18 ,  F27D5/00

CPC classification number: C30B11/002 ,  C23C4/02 ,  C23C4/08 ,  C23C4/12 ,  C23C4/18 ,  C30B29/20 ,  C30B35/002 ,  F27D2005/0075 ,  Y10T117/1092

Abstract: An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.

公开(公告)号：US20170239386A1

公开(公告)日：2017-08-24

申请号：US15504767

申请日：2015-08-18

Applicant: University Of Cincinnati

Inventor： Vesselin N. Shanov ,  Vibhor Chaswal ,  Pravahan Salunke ,  Madhura Joshi ,  Guangqi Zhang ,  Mark J. Schulz ,  Sergey N. Yarmolenko ,  Doug Nienaber

IPC: A61L27/04 ,  C30B11/02 ,  C30B29/02 ,  A61F2/30 ,  C25D11/30 ,  A61B17/80 ,  A61B17/86 ,  A61L31/02 ,  C30B33/00

CPC classification number: A61L27/047 ,  A61B17/80 ,  A61B17/86 ,  A61B2017/00526 ,  A61F2/3099 ,  A61F2002/0858 ,  A61L27/58 ,  A61L31/02 ,  A61L31/022 ,  A61L31/148 ,  C25D11/30 ,  C30B11/00 ,  C30B11/02 ,  C30B13/00 ,  C30B15/00 ,  C30B23/00 ,  C30B25/00 ,  C30B29/02 ,  C30B33/005

Abstract: A biomedical implant (16, 18) is formed from magnesium (Mg) single crystal (10). The biomedical implant (16, 18) may be biodegradable. The biomedical implant (16, 18) may be post treated to control the mechanical properties and/or corrosion rate thereof said Mg single crystal (10) without changing the chemical composition thereof. A method of making a Mg single crystal (10) for biomedical applications includes filling a single crucible (12) with more than one chamber with polycrystalline Mg, melting at least a portion of said polycrystalline Mg, and forming more than one Mg single crystal (10) using directional solidification.