Invention Grant
- Patent Title: Method of forming memory capacitor
-
Application No.: US16114217Application Date: 2018-08-28
-
Publication No.: US10559651B2Publication Date: 2020-02-11
- Inventor: Feng-Yi Chang , Fu-Che Lee , Chieh-Te Chen
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710826528 20170914
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L27/08 ; H01L49/02 ; H01L27/108
Abstract:
The present invention relates to a method of forming a memory capacitor. A substrate is provided with a plurality of storage node contacts. A patterned supporting structure is formed on the substrate, following by forming a bottom electrode conformally on surface of plural openings in the patterned supporting structure, thereby contacting the storage node contacts. A sacrificial layer is formed in the opening. A soft etching process is performed to remove the bottom electrode on top and partial sidewall of the patterned supporting structure, wherein the soft etching process includes using a fluoride containing compound, a nitrogen and hydrogen containing compound and an oxygen containing compound. The sacrificial layer is completely removed away. A capacitor dielectric layer and a top electrode are formed on the bottom electrode layer.
Public/Granted literature
- US20190081134A1 METHOD OF FORMING MEMORY CAPACITOR Public/Granted day:2019-03-14
Information query
IPC分类:
