Invention Grant
- Patent Title: Facet on a gallium and nitrogen containing laser diode
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Application No.: US15937740Application Date: 2018-03-27
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Publication No.: US10559939B1Publication Date: 2020-02-11
- Inventor: James W. Raring , Hua Huang , Phillip Skahan , Sang-Ho Oh , Ben Yonkee , Alexander Sztein , Qiyuan Wei
- Applicant: Soraa Laser Diode, Inc.
- Applicant Address: US CA Goleta
- Assignee: Soraa Laser Diode, Inc.
- Current Assignee: Soraa Laser Diode, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01S5/028
- IPC: H01S5/028 ; H01S5/02 ; H01S5/042 ; H01S5/343 ; H01S5/32 ; H01S5/20 ; H01S5/22
Abstract:
Laser diode technology incorporating etched facet mirror formation and optical coating techniques for reflectivity modification to enable ultra-high catastrophic optical mirror damage thresholds for high power laser diodes.
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