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    Manufacturable multi-emitter laser diode
    1.
    发明授权
    Manufacturable multi-emitter laser diode 有权

    公开(公告)号：US10566767B2

    公开(公告)日：2020-02-18

    申请号：US15351326

    申请日：2016-11-14

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Dan Steigerwald ,  Melvin McLaurin ,  Eric Goutain ,  Alexander Sztein ,  Po Shan Hsu ,  Paul Rudy ,  James W. Raring

    IPC: H01S5/40 ,  H01S5/343 ,  H01S5/22 ,  H01S5/02 ,  H01S5/042 ,  H01S5/00

    Abstract: A multi-emitter laser diode device includes a carrier chip singulated from a carrier wafer. The carrier chip has a length and a width, and the width defines a first pitch. The device also includes a plurality of epitaxial mesa dice regions transferred to the carrier chip from a substrate and attached to the carrier chip at a bond region. Each of the epitaxial mesa dice regions is arranged on the carrier chip in a substantially parallel configuration and positioned at a second pitch defining the distance between adjacent epitaxial mesa dice regions. Each of the plurality of epitaxial mesa dice regions includes epitaxial material, which includes an n-type cladding region, an active region having at least one active layer region, and a p-type cladding region. The device also includes one or more laser diode stripe regions, each of which has a pair of facets forming a cavity region.

    Manufacturable laser diode
    2.
    发明授权
    Manufacturable laser diode 有权

    公开(公告)号：US10367334B2

    公开(公告)日：2019-07-30

    申请号：US15176076

    申请日：2016-06-07

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  Dan Steigerwald ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/40 ,  H01S5/30 ,  H01L23/00 ,  H01S5/022 ,  H01S5/323 ,  H01S5/22

    Abstract: A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

    GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION
    3.
    发明申请
    GALLIUM AND NITROGEN CONTAINING LASER DEVICE HAVING CONFINEMENT REGION 审中-公开
    含有配位区域的激光装置的玻璃和氮化物

    公开(公告)号：US20170077677A1

    公开(公告)日：2017-03-16

    申请号：US15356302

    申请日：2016-11-18

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Po Shan Hsu ,  Melvin McLaurin ,  James W. Raring ,  Alexander Sztein ,  Benyamin Buller

    IPC: H01S5/343 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22

    CPC classification number: H01S5/34333 ,  H01S5/0202 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0425 ,  H01S5/22 ,  H01S2304/00

    Abstract: A method for fabricating a laser diode device includes providing a gallium and nitrogen containing substrate member having a surface region, forming a patterned dielectric material overlying the surface region to expose a portion of the surface region within a vicinity of an recessed region of the patterned dielectric material and maintaining an upper portion of the patterned dielectric material overlying covered portions of the surface region, and performing a lateral epitaxial growth overlying the exposed portion of the surface region to fill the recessed region and causing a thickness of the lateral epitaxial growth to be formed overlying the upper portion of the patterned dielectric material. The method also includes forming an n-type gallium and nitrogen containing material, forming an active region, and forming a p-type gallium and nitrogen containing material. The method further includes forming a waveguide structure in the p-type gallium and nitrogen containing material.

    Abstract translation: 一种制造激光二极管器件的方法包括提供具有表面区域的含镓和氮的衬底构件，形成覆盖表面区域的图案化电介质材料，以露出图案化电介质的凹陷区域附近的表面区域的一部分 材料并且保持图案化电介质材料的上部覆盖在表面区域的被覆部分上，并且执行覆盖在表面区域的暴露部分上的横向外延生长以填充凹陷区域并且形成横向外延生长的厚度 覆盖图案化电介质材料的上部。 该方法还包括形成n型含镓和氮的材料，形成有源区，并形成p型含镓和氮的材料。 该方法还包括在p型含镓和氮的材料中形成波导结构。

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    5.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 有权
    用于制造具有改进的衬底材料使用的玻璃和氮的轴承激光器件的方法

    公开(公告)号：US20150229100A1

    公开(公告)日：2015-08-13

    申请号：US14176403

    申请日：2014-02-10

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02

    CPC classification number: H01S5/0203 ,  H01S5/0202 ,  H01S5/0205 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/3202 ,  H01S5/34333 ,  H01S5/34346

    Abstract: In an example, the present invention provides a method for manufacturing a gallium and nitrogen containing laser diode device. The method includes providing a gallium and nitrogen containing substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The method includes patterning the epitaxial material to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. The method includes transferring each of the plurality of dice to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch corresponding to the design width.

    Abstract translation: 在一个实例中，本发明提供一种制造含镓和氮的激光二极管器件的方法。 该方法包括提供具有表面区域并形成覆盖在表面区域上的外延材料的含镓和氮的衬底，所述外延材料包括n型包层区域，有源区域包括覆盖在n型包层上的至少一个有源层 区域和覆盖有源层区域的p型覆层区域。 该方法包括图案化外延材料以形成多个骰子，每个骰子对应于至少一个激光装置，其特征在于一对骰子之间的第一间距，第一间距小于设计宽度。 该方法包括将多个骰子中的每一个转移到载体晶片，使得每对骰子在每对骰子之间配置有第二间距，第二间距大于对应于设计宽度的第一间距。

    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL
    7.
    发明申请
    METHOD FOR MANUFACTURING GALLIUM AND NITROGEN BEARING LASER DEVICES WITH IMPROVED USAGE OF SUBSTRATE MATERIAL 审中-公开

    公开(公告)号：US20200350740A1

    公开(公告)日：2020-11-05

    申请号：US16876569

    申请日：2020-05-18

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Alexander Sztein ,  Melvin McLaurin ,  Po Shan Hsu ,  James W. Raring

    IPC: H01S5/02 ,  H01S5/022 ,  H01S5/343 ,  H01S5/32

    Abstract: A plurality of dies includes a gallium and nitrogen containing substrate having a surface region and an epitaxial material formed overlying the surface region. The epitaxial material includes an n-type cladding region, an active region having at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active region. The epitaxial material is patterned to form the plurality of dies on the surface region, the dies corresponding to a laser device. Each of the plurality of dies includes a release region composed of a material with a smaller bandgap than an adjacent epitaxial material. A lateral width of the release region is narrower than a lateral width of immediately adjacent layers above and below the release region to form undercut regions bounding each side of the release region. Each die also includes a passivation region extending along sidewalls of the active region.

    Semiconductor laser diode on tiled gallium containing material
    9.
    发明授权
    Semiconductor laser diode on tiled gallium containing material 有权

    公开(公告)号：US10044170B1

    公开(公告)日：2018-08-07

    申请号：US15682148

    申请日：2017-08-21

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  James W. Raring

    IPC: H01L21/302 ,  H01S5/00 ,  H01S5/343 ,  H01S5/042 ,  H01S5/02 ,  H01S5/028 ,  H01S5/32

    Abstract: In an example, the present invention provides a gallium and nitrogen containing multilayered structure, and related method. The structure has a plurality of gallium and nitrogen containing semiconductor substrates, each of the gallium and nitrogen containing semiconductor substrates (“substrates”) having a plurality of epitaxially grown layers overlaying a top-side of each of the substrates. The structure has an orientation of a reference crystal direction for each of the substrates. The structure has a first handle substrate coupled to each of the substrates such that each of the substrates is aligned to a spatial region configured in a selected direction of the first handle substrate, which has a larger spatial region than a sum of a total backside region of plurality of the substrates to be arranged in a tiled configuration overlying the first handle substrate. The reference crystal direction for each of the substrates is parallel to the spatial region in the selected direction within 10 degrees or less. The structure has a first bonding medium provided between the first handle substrate and each of the substrate while maintaining the alignment between reference crystal orientation and the selected direction of the first handle substrate; and a processed region formed overlying each of the substrates configured concurrently while being bonded to the first handle substrate. Depending upon the embodiment, the processed region can include any combination of the aforementioned processing steps and/or steps.

    MANUFACTURABLE RGB LASER DIODE SOURCE
    10.
    发明申请
    MANUFACTURABLE RGB LASER DIODE SOURCE 有权
    可制造的RGB激光二极管源

    公开(公告)号：US20160372893A1

    公开(公告)日：2016-12-22

    申请号：US15180737

    申请日：2016-06-13

    Applicant: Soraa Laser Diode, Inc.

    Inventor： Melvin McLaurin ,  Alexander Sztein ,  Po Shan Hsu ,  Eric Goutain ,  James W. Raring ,  Paul Rudy ,  Vlad Novotny

    IPC: H01S5/40 ,  H01S5/323 ,  H01S5/02 ,  H01L33/00

    CPC classification number: H01S5/4093 ,  H01L24/83 ,  H01L24/95 ,  H01L33/0045 ,  H01L33/0075 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/16152 ,  H01S5/0203 ,  H01S5/0216 ,  H01S5/0217 ,  H01S5/0224 ,  H01S5/2201 ,  H01S5/32341 ,  H01S5/4025 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: A multi-wavelength light emitting device is manufactured by forming first and second epitaxial materials overlying first and second surface regions. The first and second epitaxial materials are patterned to form a plurality of first and second epitaxial dice. At least one of the first plurality of epitaxial dice and at least one of the second plurality of epitaxial dice are transferred from first and second substrates, respectively, to a carrier wafer by selectively etching a release region, separating from the substrate each of the epitaxial dice that are being transferred, and selectively bonding to the carrier wafer each of the epitaxial dice that are being transferred. The transferred first and second epitaxial dice are processed on the carrier wafer to form a plurality of light emitting devices capable of emitting at least a first wavelength and a second wavelength.

    Abstract translation: 通过形成覆盖第一和第二表面区域的第一和第二外延材料来制造多波长发光器件。 将第一和第二外延材料图案化以形成多个第一和第二外延骰子。 通过选择性地蚀刻释放区域，将第一多个外延骰子中的至少一个和第二多个外延骰子中的至少一个分别从第一和第二基板转移到载体晶片， 正在转印的骰子，并且选择性地将正在转印的每个外延骰子结合到载体晶片。 在载体晶片上处理转移的第一和第二外延晶片以形成能够发射至少第一波长和第二波长的多个发光器件。

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