- 专利标题: Layer structures for RF filters fabricated using rare earth oxides and epitaxial aluminum nitride
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申请号: US16126840申请日: 2018-09-10
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公开(公告)号: US10566944B2公开(公告)日: 2020-02-18
- 发明人: Rodney Pelzel , Rytis Dargis , Andrew Clark , Howard Williams , Patrick Chin , Michael Lebby
- 申请人: IQE plc
- 申请人地址: GB St. Mellons, Cardiff
- 专利权人: IQE plc
- 当前专利权人: IQE plc
- 当前专利权人地址: GB St. Mellons, Cardiff
- 代理机构: Haley Guiliano LLP
- 主分类号: H03H1/00
- IPC分类号: H03H1/00 ; H01L41/08 ; H01L41/319 ; H03H3/02 ; H03H3/08 ; H03H9/17 ; H01L23/66 ; H01L27/06 ; H01L29/66 ; H01L29/737 ; H01L29/778 ; H01L41/083
摘要:
Layer structures for RF filters can be fabricated using rare earth oxides and epitaxial aluminum nitride, and methods for growing the layer structures. A layer structure can include an epitaxial crystalline rare earth oxide (REO) layer over a substrate, a first epitaxial electrode layer over the crystalline REO layer, and an epitaxial piezoelectric layer over the first epitaxial electrode layer. The layer structure can further include a second electrode layer over the epitaxial piezoelectric layer. The first electrode layer can include an epitaxial metal. The epitaxial metal can be single-crystal. The first electrode layer can include one or more of a rare earth pnictide, and a rare earth silicide (RESi).