利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

6175 条记录 (耗时 0.023 秒)

    METHODS FOR REDUCING SURFACE DEFECTS IN ACTIVE FILM LAYERS
    1.
    发明公开
    METHODS FOR REDUCING SURFACE DEFECTS IN ACTIVE FILM LAYERS 审中-公开

    公开(公告)号：US20230345836A1

    公开(公告)日：2023-10-26

    申请号：US17886854

    申请日：2022-08-12

    申请人： Applied Materials, Inc.

    发明人： Ming GAO ,  Lizhong SUN ,  Xiaodong YANG

    IPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/08 ,  H01L41/083

    CPC分类号： H01L41/319 ,  H01L41/316 ,  H01L41/0815 ,  H01L41/083

    摘要： A method of reducing surface defects of a piezoelectric film layer includes depositing a first seed layer on a substrate, depositing an intermediate film layer on the first seed layer at a first temperature of approximately 350 degrees Celsius to approximately 700 degrees Celsius, depositing a second seed layer on the intermediate film layer, and depositing a piezoelectric film layer at a second temperature of less than 200 degrees Celsius. The piezoelectric film layer has a surface cone defect count of less than or equal to 2 per 100 microns2 of surface area of the piezoelectric film layer. In some embodiments, no vacuum breaks occur between depositions of the first seed layer, the intermediate film layer, the second seed layer, and the piezoelectric film layer.

    FBAR devices having multiple epitaxial layers stacked on a same substrate
    7.
    发明授权
    FBAR devices having multiple epitaxial layers stacked on a same substrate 有权

    公开(公告)号：US11616488B2

    公开(公告)日：2023-03-28

    申请号：US16326590

    申请日：2016-09-30

    申请人： INTEL CORPORATION

    发明人： Sansaptak Dasgupta ,  Paul B. Fischer ,  Han Wui Then ,  Marko Radosavljevic

    IPC分类号： H03H9/205 ,  H03H3/02 ,  H03H9/58 ,  H03H9/60 ,  H03H9/17 ,  H01L27/20 ,  H01L41/08 ,  H01L41/187 ,  H01L41/29 ,  H01L41/316 ,  H03H9/02

    摘要： An integrated circuit film bulk acoustic resonator (FBAR) device having multiple resonator thicknesses is formed on a common substrate in a stacked configuration. In an embodiment, a seed layer is deposited on a substrate, and one or more multi-layer stacks are deposited on the seed layer, each multi-layer stack having a first metal layer deposited on a first sacrificial layer, and a second metal layer deposited on a second sacrificial layer. The second sacrificial layer can be removed and the resulting space is filled in with a piezoelectric material, and the first sacrificial layer can be removed to release the piezoelectric material from the substrate and suspend the piezoelectric material above the substrate. More than one multi-layer stack can be added, each having a unique resonant frequency. Thus, multiple resonator thicknesses can be achieved on a common substrate, and hence, multiple resonant frequencies on that same substrate.

    PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC TRANSDUCER
    10.
    发明申请
    PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM ELEMENT, AND PIEZOELECTRIC TRANSDUCER 有权

    公开(公告)号：US20230055097A1

    公开(公告)日：2023-02-23

    申请号：US17875623

    申请日：2022-07-28

    申请人： TDK Corporation

    发明人： Junpei MORISHITA

    IPC分类号： H01L41/08 ,  H01L41/314 ,  H01L41/09

    摘要： A piezoelectric thin film contains a lower layer and a first piezoelectric layer stacked on the lower layer. The first piezoelectric layer contains a tetragonal crystal 1 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction dn of a surface of the first piezoelectric layer. A spacing of (100) planes of the tetragonal crystal 1 is a1. A spacing of (100) planes of a crystal contained in the lower layer is aL. A lattice mismatch rate between the first piezoelectric layer and the lower layer is 100×(aL−a1)/a1. The lattice mismatch rate is 3.0 to 12.1%. A rocking curve of diffracted X-rays of the (001) plane of the tetragonal crystal 1 is measured in an out-of-plane direction of the surface of the first piezoelectric layer. A FWHM of the rocking curve is 1.9 to 5.5°.