- Patent Title: Extreme ultraviolet photomask and method for fabricating the same
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Application No.: US15585000Application Date: 2017-05-02
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Publication No.: US10571796B2Publication Date: 2020-02-25
- Inventor: En-Chiuan Liou , Yu-Cheng Tung
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Priority: TW106110220A 20170328
- Main IPC: G03F1/24
- IPC: G03F1/24 ; G03F1/52 ; G03F1/54 ; G03F1/80
Abstract:
An extreme ultraviolet (EUV) photomask includes a mask substrate, a reflection layer and a light-absorbing pattern layer. The reflection layer is disposed on the mask substrate, wherein the reflection layer has a concave pattern. The light-absorbing pattern layer is in the reflection layer, to fill the concave pattern. The light-absorbing pattern layer is exposed.
Public/Granted literature
- US20180284596A1 EXTREME ULTRAVIOLET PHOTOMASK AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-10-04
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