- Patent Title: Key generating method and apparatus using characteristic of memory
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Application No.: US15428677Application Date: 2017-02-09
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Publication No.: US10572651B2Publication Date: 2020-02-25
- Inventor: Seung-Chan Kim , Jungsoon Shin , Taesung Jung , Du-Sik Park , Joonah Park , Soochul Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2016-0017671 20160216; KR10-2016-0124008 20160927
- Main IPC: G06F21/44
- IPC: G06F21/44 ; G11C29/52

Abstract:
A key generating method includes obtaining a first error correcting code (ECC) for original data, obtaining read data from a cell array of a memory comprising the original data, generating a second ECC for the read data, obtaining a location of a cell in which an error occurs from the cell array of the memory in response to the second ECC being different from the first ECC, and generating a key for the memory based on the location of the cell in which the error occurs.
Public/Granted literature
- US20170235941A1 KEY GENERATING METHOD AND APPARATUS USING CHARACTERISTIC OF MEMORY Public/Granted day:2017-08-17
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