Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16151585Application Date: 2018-10-04
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Publication No.: US10573604B2Publication Date: 2020-02-25
- Inventor: Kuniharu Muto , Ryo Kanda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: Mattingly & Malur, PC
- Priority: JP2016-254678 20161228
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L21/48 ; H01L21/56 ; H01L23/544 ; H01L21/78 ; H02M7/5387 ; H02P27/06 ; H02M7/00 ; H02M1/00

Abstract:
A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.
Public/Granted literature
- US20190035745A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-01-31
Information query
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