Invention Grant
- Patent Title: Field effect transistors having a fin
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Application No.: US16108899Application Date: 2018-08-22
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Publication No.: US10573728B2Publication Date: 2020-02-25
- Inventor: Toru Tanzawa
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L29/66 ; H01L29/78 ; H01L29/06 ; H01L27/112

Abstract:
Transistors might include first and second semiconductor fins, a first source/drain region in the first semiconductor fin and extending downward from an uppermost surface of the first semiconductor fin, a second source/drain region in the second semiconductor fin and extending downward from an uppermost surface of the second semiconductor fin, a dielectric between the first and second semiconductor fins and adjacent to sidewalls of the first and second semiconductor fins, and a control gate over the dielectric and between the first and second semiconductor fins and extending to a level below upper surfaces of the first and second source/drain regions.
Public/Granted literature
- US20180374937A1 FIELD EFFECT TRANSISTORS HAVING A FIN Public/Granted day:2018-12-27
Information query
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