- 专利标题： Buried low-resistance metal word lines for cross-point variable-resistance material memories
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申请号： US16127984申请日： 2018-09-11
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公开(公告)号： US10573812B2公开(公告)日： 2020-02-25
- 发明人: Jun Liu , Michael P. Violette
- 申请人： Micron Technology, Inc.
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Schwegman Lundberg & Woessner, P.A.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; G11C13/00 ; H01L27/24 ; H01L27/10
摘要：
Variable-resistance material memories include a buried salicide word line disposed below a diode. Variable-resistance material memories include a metal spacer spaced apart and next to the diode. Processes include the formation of one of the buried salicide word line and the metal spacer. Devices include the variable-resistance material memories and one of the buried salicided word line and the spacer word line.
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