Various embodiments of the present technology may comprise methods and apparatus for an image sensor capable of simultaneous integration of electrons and holes. According to an exemplary embodiment, the image sensor comprises a backside-illuminated hybrid bonded stacked chip image sensor comprising a pixel circuit array, and each pixel circuit comprising a charge storage capacitor oriented in a vertical direction in a deep trench isolation region. Both the electrons and holes are generated and integrated (collected) in the pixel simultaneously, and the charge storage capacitor is used for storing the signal generated by holes in the high light level illuminated pixels.