Invention Grant
- Patent Title: Fault tolerant low leakage switch
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Application No.: US16238338Application Date: 2019-01-02
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Publication No.: US10581423B1Publication Date: 2020-03-03
- Inventor: Srivatsan Parthasarathy , Sirui Luo , Thomas Paul Kearney , Yuanzhong Zhou , Donal Bourke , Jean-Jacques Hajjar
- Applicant: Analog Devices Global Unlimited Company
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global Unlimited Company
- Current Assignee: Analog Devices Global Unlimited Company
- Current Assignee Address: BM Hamilton
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H02H9/00 ; H03K17/081 ; H03K17/0412

Abstract:
Fault tolerant switches are provided herein. In certain embodiments, a fault tolerant switch includes a switch, a gate driver, and a clamp. The switch includes a switch p-type field effect transistor (PFET) and a switch n-type field effect transistor (NFET) electrically connected in series and controlled by the gate driver. Additionally, the clamp is electrically connected in parallel with the switch, and includes a forward protection circuit including a first diode and a first clamp FET in series, and a reverse protection circuit including a second diode and a second clamp FET in series. The clamp further includes a first gate bias circuit configured to bias a gate of the first clamp FET and a second gate bias circuit configured to bias a gate of the second clamp FET.
Public/Granted literature
- US20200059228A1 FAULT TOLERANT LOW LEAKAGE SWITCH Public/Granted day:2020-02-20
Information query
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