The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.