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公开(公告)号：US20200150338A1
公开(公告)日：2020-05-14
申请号：US16735780
申请日：2020-01-07
Inventor： Jeffrey Chiles , Sasan Fathpour
Abstract: A photonic device may include a lower cladding layer and a device layer. The device layer may include a first waveguide supporting TE and TM light, and a second waveguide, where a portion of a second waveguide core is proximate to a first waveguide core to provide evanescent coupling. The first waveguide core is formed from one of a first core structure or a second core structure, and the second waveguide core is formed from the other structure. The first core structure has an index of refraction nM. The second core structure is formed as alternating layers providing an effective index of refraction for TE polarized light nTE and an effective index of refraction for TM polarized light nTM, where nTM
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公开(公告)号：US10916918B2
公开(公告)日：2021-02-09
申请号：US16207890
申请日：2018-12-03
Inventor： Jeffrey Chiles , Sasan Fathpour
Abstract: An integrated photonic structure and a method of fabrication includes a substrate having at least one opening disposed therein; a semiconductor stack disposed above the substrate, the semiconductor stack being, at least in part, isolated from the substrate by an opening to define a suspended semiconductor membrane; and a first doped region and a second doped region located within the suspended semiconductor membrane. The first doped region is laterally separated from the second doped region by an optically active region disposed therein that defines a waveguiding region of the integrated photonic structure.
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Patent Agency Ranking
公开(公告)号：US10585241B2
公开(公告)日：2020-03-10
申请号：US16064537
申请日：2016-12-20
Inventor： Sasan Fathpour , Jeffrey Chiles
Abstract: The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.
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公开(公告)号：US20180314004A1
公开(公告)日：2018-11-01
申请号：US15932800
申请日：2018-04-26
Inventor： Sasan Fathpour , Amirmahdi Honardoost , Saeed Khan
CPC classification number: G02B6/132 , G02B6/12002 , G02B6/12004 , G02B6/1228 , G02B2006/1204 , G02B2006/12061 , G02B2006/12097 , G02B2006/12142 , G02B2006/12188
Abstract: A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.
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公开(公告)号：US10732348B2
公开(公告)日：2020-08-04
申请号：US16214456
申请日：2018-12-10
Inventor： Jeffrey Chiles , Sasan Fathpour
Abstract: A photonic device has a polarization-dependent region and a device layer including a first cladding film, a second cladding film, and a core film. The core film includes one of (1) a material having an index nM and (2) alternating layers of a first material having a first index and second material having a second index. The alternating layers have an effective index for TE polarized light nTE and an effective index for TM polarized light nTM. Each of the first cladding film and the second cladding film include the other of (1) the material having the index of refraction nM and (2) the alternating layers nTM
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公开(公告)号：US10718904B2
公开(公告)日：2020-07-21
申请号：US15932800
申请日：2018-04-26
Inventor： Sasan Fathpour , Amirmahdi Honardoost , Saeed Khan
Abstract: A photonic integrated circuit and a method of fabrication are provided which includes: a substrate; a first optical waveguide disposed, at least in part, extending across the substrate, the first optical waveguide being configured to transmit a first mode of light; and a second optical waveguide located at least partially over the first optical waveguide, the second optical waveguide being configured to transmit a second mode of light, wherein the first optical waveguide is vertically coupled to the second optical waveguide through a third optical waveguide disposed below the second waveguide.
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公开(公告)号：US20180372953A1
公开(公告)日：2018-12-27
申请号：US16064537
申请日：2016-12-20
Inventor： Sasan Fathpour , Jeffrey Chiles
CPC classification number: G02B6/1225 , G02B6/1221 , G02B6/1223 , G02B6/136 , G02B2006/12147 , G02B2006/1215 , G02B2006/12173 , G02B2006/12176
Abstract: The present invention is an integrated photonics platform is created through the application of a polymer and silicon dioxide mask, multiple anisotropic etchings with inductively-coupled plasma reactive-ion-etching and a brief isotropic silicon etching to produce a a T-shaped silicon base wafer. A silicon-on-insulator donor wafer is bonded to the silicon base wafer a silicon dioxide layer between the two wafers is removed, producing a finalized T-shaped optical waveguide. The T-shaped optical waveguide causes confinement of the optical mode in the upper region of the “T,” above the connection to the post. This shape prevents leakage of light into the silicon wafer.
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