Invention Grant
- Patent Title: Adaptive thermal overshoot and current limiting protection for MOSFETs
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Application No.: US16035007Application Date: 2018-07-13
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Publication No.: US10586791B2Publication Date: 2020-03-10
- Inventor: Qingjie Ma , Wei Xu , Jingwei Xu , Yang Wang
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Charles A. Brill; Frank D. Cimino
- Main IPC: H03K17/0812
- IPC: H03K17/0812 ; H01L27/02 ; H03K17/081 ; H03K17/08

Abstract:
In a described example, an apparatus includes: a first metal oxide semiconductor field effect transistor (MOSFET) coupled between a first input terminal for receiving a supply voltage and an output terminal for coupling to a load, and having a first gate terminal; an enable terminal coupled to the first gate terminal for receiving an enable signal; a first current mirror coupled between the first input terminal and a first terminal of a first series resistor and having an input coupled to the first gate terminal; and a second MOSFET coupled between the first gate terminal and the output terminal, and having a second gate terminal coupled to the first terminal of the first series resistor, the first series resistor having a second terminal coupled to the output terminal.
Public/Granted literature
- US20190279977A1 ADAPTIVE THERMAL OVERSHOOT AND CURRENT LIMITING PROTECTION FOR MOSFETS Public/Granted day:2019-09-12
Information query
IPC分类: