Invention Grant
- Patent Title: Multilayer device
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Application No.: US16065782Application Date: 2016-01-15
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Publication No.: US10586847B2Publication Date: 2020-03-10
- Inventor: Di Liang , Xue Huang
- Applicant: Hewlett Packard Enterprise Development LP
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: McDermott Will & Emery, LC
- International Application: PCT/US2016/013605 WO 20160115
- International Announcement: WO2017/123245 WO 20170720
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/762 ; H01L21/20 ; H01L21/306 ; H01L27/07 ; H01L29/786 ; H01L29/66 ; H01L29/20

Abstract:
A multilayer device includes a substrate having a trench extending along a first surface of the substrate. A first layer disposed on the first surface of the substrate, the first layer comprising a given surface and another surface. A dielectric layer is formed between the given surface of the first layer and the first surface of the substrate. An active region disposed on the other surface of the first layer overlying the trench, wherein at least a portion of the active region resides substantially above a region defined by the trench.
Public/Granted literature
- US20190019863A1 MULTILAYER DEVICE Public/Granted day:2019-01-17
Information query
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