Invention Grant
- Patent Title: Vertical transistor with one-dimensional edge contacts
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Application No.: US16055128Application Date: 2018-08-05
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Publication No.: US10586864B2Publication Date: 2020-03-10
- Inventor: Jianshi Tang , Qing Cao
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Intelletek Law Group, PLLC
- Agent Gabriel Daniel, Esq.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/285 ; H01L21/8234 ; H01L21/308 ; H01L29/417
Abstract:
A vertical transistor and a method of creating thereof are provided. A substrate is provided. A first electrode, comprising a two-dimensional (2D) material, is defined on top of the substrate. A spacer is deposited on top of the first electrode. A second electrode, comprising a 2D material, is defined on top of the spacer. A mask layer is formed on top of the second electrode. A channel is formed on top of the mask layer. A gate dielectric layer is provided on top of the channel. A gate coupled to the second portion of the gate dielectric is provided.
Public/Granted literature
- US20200044082A1 Vertical Transistor with One-Dimensional Edge Contacts Public/Granted day:2020-02-06
Information query
IPC分类:
