发明授权
- 专利标题: Thin film transistor, fabricating method and driving method thereof, and display device
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申请号: US15941340申请日: 2018-03-30
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公开(公告)号: US10586937B2公开(公告)日: 2020-03-10
- 发明人: Defeng Mao
- 申请人: BOE Technology Group Co., Ltd.
- 申请人地址: CN Beijing
- 专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人: BOE TECHNOLOGY GROUP CO., LTD.
- 当前专利权人地址: CN Beijing
- 代理机构: Nath, Goldberg & Meyer
- 代理商 Joshua B. Goldberg
- 优先权: CN201710818794 20170912
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; H01L27/12 ; H01L51/00 ; H01L51/10
摘要:
The present application provides a thin film transistor, a method for fabricating the same, a method for driving the same, and a display device. The thin film transistor includes a gate pattern, a gate insulation layer, an active layer pattern, a source/drain pattern, and a passivation layer. The active layer pattern is made of a carbon nanotube material, and the passivation layer is made of a charge-resistant material capable of reducing mobile charges on a surface of the carbon nanotube material.
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