Invention Grant
- Patent Title: Semiconductor structure with capacitor landing pad and method of make the same
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Application No.: US15947856Application Date: 2018-04-08
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Publication No.: US10593677B2Publication Date: 2020-03-17
- Inventor: Feng-Yi Chang , Fu-Che Lee , Chieh-Te Chen , Yi-Ching Chang
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710645803 20170801
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8242 ; H01L23/532 ; H01L21/768 ; H01L23/528
Abstract:
The present invention discloses a semiconductor structure with capacitor landing pad and a method for fabricating a capacitor landing pad. The semiconductor structure with capacitor landing pad includes a substrate having a plurality of contact structures, a first dielectric layer disposed on the substrate and the contact structures, and a plurality of capacitor landing pads, each of the capacitor landing pads being located in the first dielectric layer and electrically connected to the contact structure, wherein the capacitor landing pads presents a shape of a wide top and a narrow bottom and a top surface of the capacitor landing pads have a concave shape.
Public/Granted literature
- US20190043865A1 SEMICONDUCTOR STRUCTURE WITH CAPACITOR LANDING PAD AND METHOD OF MAKE THE SAME Public/Granted day:2019-02-07
Information query
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