Invention Grant
- Patent Title: Power amplifier cell
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Application No.: US16119692Application Date: 2018-08-31
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Publication No.: US10594274B2Publication Date: 2020-03-17
- Inventor: Jawad Hussain Qureshi , Mustafa Acar
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP17199444 20171031
- Main IPC: H03F3/45
- IPC: H03F3/45 ; H03F1/56 ; H03F1/02 ; H03F3/21 ; H03F3/19 ; H03F3/24 ; H03F3/193

Abstract:
A power amplifier cell comprising a first power amplifier, a second power amplifier and a balun. The balun comprises a first inductor and a second inductor that define a first transformer; and a third inductor and a fourth inductor that define a second transformer. The following: (i) a parasitic capacitance of the first power amplifier; (ii) a leakage inductance of the first transformer; and (iii) a capacitive coupling between the first inductor and the second inductor, contribute to a first impedance matching circuit for the first power amplifier. Also, the following (iv) a parasitic capacitance of the second power amplifier; (v) a leakage inductance of the second transformer; and (vi) a capacitive coupling between the third inductor and the fourth inductor, contribute to a second impedance matching circuit for the second power amplifier.
Public/Granted literature
- US20190131938A1 POWER AMPLIFIER CELL Public/Granted day:2019-05-02
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