- 专利标题: Gas sensor and manufacturing method of the same
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申请号: US15914828申请日: 2018-03-07
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公开(公告)号: US10598647B2公开(公告)日: 2020-03-24
- 发明人: Tamio Ikehashi , Hiroaki Yamazaki
- 申请人: KABUSHIKI KAISHA TOSHIBA
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2017-180740 20170920
- 主分类号: G01N33/00
- IPC分类号: G01N33/00 ; G01N27/22 ; G01N25/20
摘要:
According to one embodiment, a gas sensor is disclosed. The gas sensor includes a substrate region, a first electrode provided on the substrate region, and a movable structure above the first electrode. The movable structure includes a deformable member which deforms by absorbing or adsorbing a predetermined gas, a heat member which heats the deformable member, and a second electrode. The gas sensor further includes a first cavity region which is provided between the first electrode and the second electrode.
公开/授权文献
- US20190086377A1 GAS SENSOR AND MANUFACTURING METHOD OF THE SAME 公开/授权日:2019-03-21
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