Invention Grant
- Patent Title: Capacitor and method of fabricating the same
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Application No.: US15619108Application Date: 2017-06-09
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Publication No.: US10600568B2Publication Date: 2020-03-24
- Inventor: Po-Han Jen
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agent Jiawei Huang
- Priority: CN201710364072 20170522
- Main IPC: H01G4/06
- IPC: H01G4/06 ; H01G4/005 ; H01L23/522 ; H01G4/012 ; H01L49/02 ; H01G4/12 ; H01G4/08 ; H01G4/33

Abstract:
A capacitor includes a first electrode, a dielectric, and a second electrode. The first electrode is located on a dielectric layer. The dielectric covers the sidewall and the top surface of the first electrode. The second electrode covers the dielectric and the dielectric layer, wherein the orthographic projection area of the second electrode on the dielectric layer is greater than the orthographic projection area of the first electrode on the dielectric layer. The capacitor of the invention has good reliability.
Public/Granted literature
- US20180337000A1 CAPACITOR AND METHOD OF FABRICATING THE SAME Public/Granted day:2018-11-22
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