Invention Grant
- Patent Title: Contact hole structure and fabricating method of contact hole and fuse hole
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Application No.: US16505724Application Date: 2019-07-09
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Publication No.: US10600749B2Publication Date: 2020-03-24
- Inventor: Feng-Yi Chang , Fu-Che Lee , Chin-Hsin Chiu
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201611247351 20161229
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L21/66 ; H01L23/525 ; H01L23/62 ; H01L23/532 ; H01L23/485 ; H01L23/528 ; H01L21/311 ; H01L23/31

Abstract:
A method of fabricating a contact hole and a fuse hole includes providing a dielectric layer. A conductive pad and a fuse are disposed within the dielectric layer. Then, a first mask is formed to cover the dielectric layer. Later, a first removing process is performed by taking the first mask as a mask to remove part the dielectric layer to form a first trench. The conductive pad is disposed directly under the first trench and does not expose through the first trench. Subsequently, the first mask is removed. After that, a second mask is formed to cover the dielectric layer. Then, a second removing process is performed to remove the dielectric layer directly under the first trench to form a contact hole and to remove the dielectric layer directly above the fuse by taking the second mask as a mask to form a fuse hole.
Public/Granted literature
- US20190333884A1 CONTACT HOLE STRUCTURE AND FABRICATING METHOD OF CONTACT HOLE AND FUSE HOLE Public/Granted day:2019-10-31
Information query
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