Invention Grant
- Patent Title: Standard cell architecture for gate tie-off
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Application No.: US15886611Application Date: 2018-02-01
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Publication No.: US10600866B2Publication Date: 2020-03-24
- Inventor: Xiangdong Chen , Venugopal Boynapalli , Hyeokjin Lim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP/Qualcomm
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L29/06 ; H01L23/532 ; H01L23/522 ; H01L29/66 ; H01L23/528 ; H01L27/118 ; H01L27/02

Abstract:
According to certain aspects of the present disclosure, a chip includes a first gate, a second gate, a first source, a first source contact disposed on the first source, a metal interconnect above the first source contact and the first gate, a first gate contact electrically coupling the first gate to the metal interconnect, and a first via electrically coupling the first source contact to the metal interconnect. The chip also includes a power rail, and a second via electrically coupling the first source contact to the power rail. The second gate is between the first source and the first gate, and the metal interconnect passes over the second gate.
Public/Granted literature
- US20190237542A1 NOVEL STANDARD CELL ARCHITECTURE FOR GATE TIE-OFF Public/Granted day:2019-08-01
Information query
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