公开(公告)号：US11290109B1

公开(公告)日：2022-03-29

申请号：US17030087

申请日：2020-09-23

Applicant: QUALCOMM Incorporated

Inventor： Foua Vang ,  Hyeokjin Lim ,  Seung Hyuk Kang ,  Venugopal Boynapalli ,  Shitiz Arora

IPC: H01L21/00 ,  H03K19/094 ,  H01L23/528

Abstract: A MOS IC includes a MOS logic cell that includes first and second sets of transistor logic in first and second subcells, respectively. The first and second sets of transistor logic are functionally isolated from each other. The MOS logic cell includes a first set of Mx layer interconnects on an Mx layer extending in a first direction over the first and second subcells. A first subset of the first set of Mx layer interconnects is coupled to inputs/outputs of the first set of transistor logic in the first subcell and is unconnected to the second set of transistor logic. Each of the first subset of the first set of Mx layer interconnects extends from the corresponding input/output of the first set of transistor logic of the first subcell to the second subcell, and is the corresponding input/output of the first set of transistor logic.

公开(公告)号：US11437379B2

公开(公告)日：2022-09-06

申请号：US17025211

申请日：2020-09-18

Applicant: QUALCOMM Incorporated

Inventor： Stanley Seungchul Song ,  Deepak Sharma ,  Bharani Chava ,  Hyeokjin Lim ,  Peijie Feng ,  Seung Hyuk Kang ,  Jonghae Kim ,  Periannan Chidambaram ,  Kern Rim ,  Giridhar Nallapati ,  Venugopal Boynapalli ,  Foua Vang

IPC: H01L21/336 ,  H01L29/66 ,  H01L27/095 ,  H01L23/528 ,  H01L29/78 ,  H03K19/0185

Abstract: Field-effect transistor (FET) circuits employing topside and backside contacts for topside and backside routing of FET power and logic signals. A FET circuit is provided that includes a FET that includes a conduction channel, a source, a drain, and a gate. The FET circuit also includes a topside metal contact electrically coupled with at least one of the source, drain, and gate of the FET. The FET circuit also includes a backside metal contact electrically coupled with at least one of the source, drain, and gate of the FET. The FET circuit also includes topside and backside metal lines electrically coupled to the respective topside and backside metal contacts to provide power and signal routing to the FET. A complementary metal oxide semiconductor (CMOS) circuit is also provided that includes a PFET and NFET that each includes a topside and backside contact for power and signal routing.

公开(公告)号：US10600866B2

公开(公告)日：2020-03-24

申请号：US15886611

申请日：2018-02-01

Applicant: QUALCOMM Incorporated

Inventor： Xiangdong Chen ,  Venugopal Boynapalli ,  Hyeokjin Lim

IPC: H01L23/535 ,  H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L29/66 ,  H01L23/528 ,  H01L27/118 ,  H01L27/02

Abstract: According to certain aspects of the present disclosure, a chip includes a first gate, a second gate, a first source, a first source contact disposed on the first source, a metal interconnect above the first source contact and the first gate, a first gate contact electrically coupling the first gate to the metal interconnect, and a first via electrically coupling the first source contact to the metal interconnect. The chip also includes a power rail, and a second via electrically coupling the first source contact to the power rail. The second gate is between the first source and the first gate, and the metal interconnect passes over the second gate.

公开(公告)号：US10784345B2

公开(公告)日：2020-09-22

申请号：US16781856

申请日：2020-02-04

Applicant: QUALCOMM Incorporated

Inventor： Xiangdong Chen ,  Venugopal Boynapalli ,  Hyeokjin Lim

IPC: H01L29/78 ,  H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L29/66 ,  H01L23/528 ,  H01L27/118 ,  H01L27/02

Abstract: A chip includes a first gate extended along a second lateral direction, a first source electrically coupled to a power rail, and a first metal interconnect extended along a first lateral direction approximately perpendicular to the second lateral direction, wherein the first metal interconnect lies above the first gate and the first source, and the first metal interconnect is configured to electrically couple the first gate to the first source. The chip also includes a second gate extended along the second lateral direction, a second source electrically coupled to the power rail, and a second metal interconnect extended along the first lateral direction, wherein the second metal interconnect lies above the second gate and second source, the second metal interconnect is configured to electrically couple the second gate to the second source, and the first metal interconnect is aligned with the second metal interconnect in the second lateral direction.

公开(公告)号：US10605859B2

公开(公告)日：2020-03-31

申请号：US15265744

申请日：2016-09-14

Applicant: QUALCOMM Incorporated

Inventor： Rami Salem ,  Lesly Zaren V. Endrinal ,  Hyeokjin Lim ,  Hadi Bunnalim ,  Robert Kim ,  Lavakumar Ranganathan ,  Mickael Malabry

IPC: G01R31/28 ,  H01L23/50 ,  H01L27/02 ,  H01L27/088 ,  G01R31/311 ,  H01L23/544 ,  H01L23/528 ,  H01L27/118

Abstract: A MOS IC includes a first standard cell including first and second power rails, first and second active regions, and a plurality of metal interconnects. The first power rail extends in a first direction and provides a first voltage to the first standard cell. The second power rail extends in the first direction and provides a second voltage to the first standard cell. The first active region is between the first and second power rails on a first side of the first standard cell. The second active region is between the first and second power rails on a second side of the first standard cell. The second active region is separated from the first active region. The plurality of metal interconnects extend in a second direction between the first and second active regions and between the first and second power rails. The second direction is orthogonal to the first direction.

公开(公告)号：US20190088591A1

公开(公告)日：2019-03-21

申请号：US15707807

申请日：2017-09-18

Applicant: QUALCOMM Incorporated

Inventor： Renukprasad Hiremath ,  Hyeokjin Lim ,  Foua Vang ,  Xiangdong Chen ,  Venugopal Boynapalli

IPC: H01L23/522 ,  H01L23/528 ,  H01L27/092

Abstract: In certain aspects, a semiconductor die includes a first doped region, a second doped region, and an interconnect formed from a first middle of line (MOL) layer, wherein the interconnect electrically couples the first doped region to the second doped region. The semiconductor die also includes a first metal line formed from a first interconnect metal layer, and a first via electrically coupling the interconnect to the first metal line.

公开(公告)号：US11710733B2

公开(公告)日：2023-07-25

申请号：US16808336

申请日：2020-03-03

Applicant: QUALCOMM Incorporated

Inventor： Hyeokjin Lim ,  Bharani Chava ,  Foua Vang ,  Seung Hyuk Kang ,  Venugopal Boynapalli

IPC: H01L27/02 ,  H03K19/0185 ,  H01L23/528

CPC classification number: H01L27/0207 ,  H01L23/528 ,  H03K19/018557

Abstract: A MOS IC logic cell includes a plurality of gate interconnects extending on tracks in a first direction. The logic cell includes intra-cell routing interconnects coupled to at least a subset of the gate interconnects. The intra-cell routing interconnects include intra-cell Mx layer interconnects on an Mx layer extending in the first direction. The Mx layer is a lowest metal layer for PG extending in the first direction. The intra-cell Mx layer interconnects extend in the first direction over at least a subset of the tracks excluding every mth track, where 2≤m m*P.

公开(公告)号：US10965289B2

公开(公告)日：2021-03-30

申请号：US16267289

申请日：2019-02-04

Applicant: QUALCOMM Incorporated

Inventor： Satyanarayana Sahu ,  Xiangdong Chen ,  Venugopal Boynapalli ,  Hyeokjin Lim ,  Mickael Malabry ,  Mukul Gupta

IPC: H03K19/0948 ,  H01L27/118 ,  H01L23/528 ,  H01L27/02 ,  H01L23/522 ,  H01L27/092

Abstract: A MOS device of an IC includes pMOS and nMOS transistors. The MOS device further includes a first Mx layer interconnect extending in a first direction and coupling the pMOS and nMOS transistor drains together, and a second Mx layer interconnect extending in the first direction and coupling the pMOS and nMOS transistor drains together. The first and second Mx layer interconnects are parallel. The MOS device further includes a first Mx+1 layer interconnect extending in a second direction orthogonal to the first direction. The first Mx+1 layer interconnect is coupled to the first Mx layer interconnect and the second Mx layer interconnect. The MOS device further includes a second Mx+1 layer interconnect extending in the second direction. The second Mx+1 layer interconnect is coupled to the first Mx layer interconnect and the second Mx layer interconnect. The second Mx+1 layer interconnect is parallel to the first Mx+1 layer interconnect.

公开(公告)号：US10777640B2

公开(公告)日：2020-09-15

申请号：US16781820

申请日：2020-02-04

Applicant: QUALCOMM Incorporated

Inventor： Xiangdong Chen ,  Venugopal Boynapalli ,  Hyeokjin Lim

IPC: H01L29/06 ,  H01L23/532 ,  H01L23/522 ,  H01L29/66 ,  H01L23/528 ,  H01L27/118 ,  H01L27/02

Abstract: In certain aspects of the disclosure, a cell includes a first dummy gate extended along a second lateral direction and on a boundary of the cell, a second dummy gate extended along the second lateral direction and on an opposite boundary of the cell, and a third gate extended along the second lateral direction, wherein the third gate is between the first dummy gate and the second dummy gate. The cell also includes a source between the second dummy gate and the third gate electrically coupled to a power rail. The cell further includes a metal interconnect extended along a first lateral direction approximately perpendicular to the second lateral direction and above the first dummy gate, the source, and the third gate, wherein the metal interconnect is configured to couple the first dummy gate to the power rail through the source.

公开(公告)号：US20190172823A1

公开(公告)日：2019-06-06

申请号：US15831991

申请日：2017-12-05

Applicant: QUALCOMM Incorporated

Inventor： Xiangdong Chen ,  Sorin Adrian Dobre ,  Hyeokjin Lim ,  Venugopal Boynapalli

IPC: H01L27/02 ,  H01L21/8238 ,  H01L27/092 ,  G06F17/50

Abstract: In certain aspects, a semiconductor die includes a first cell and a second cell. The first cell includes first transistors, and a first interconnect structure interconnecting the first transistors to form a first circuit. The second cell includes second transistors, and a second interconnect structure interconnecting the second transistors to form a second circuit. The first circuit and the second circuit are configured to perform a same function, and a length of the first cell in a first lateral direction is greater than a length of the second cell in the first lateral direction.