Invention Grant
- Patent Title: High voltage device and manufacturing method thereof
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Application No.: US15937741Application Date: 2018-03-27
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Publication No.: US10600908B2Publication Date: 2020-03-24
- Inventor: Tsung-Yi Huang
- Applicant: RICHTEK TECHNOLOGY CORPORATION
- Applicant Address: unknown Zhubei, Hsinchu
- Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee: RICHTEK TECHNOLOGY CORPORATION
- Current Assignee Address: unknown Zhubei, Hsinchu
- Agency: Tung & Associates
- Priority: TW106128637A 20170823
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L29/40 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/423 ; H01L21/265 ; H01L21/266
Abstract:
The present invention discloses a high voltage device and a manufacturing method thereof. The high voltage device is formed in a semiconductor substrate, and includes: a gate, a source, a drain, and at least one plug plate electrode. The plug plate electrode is in direct contact with the gate, and is electrically connected to the gate. The plug plate electrode extends downwards from the bottom of the gate to the semiconductor substrate, through a current vertical height of a conductive current when the high voltage is ON. The plug plate electrode is between the source and the drain in a lateral direction. The plug plate electrode includes a dielectric layer and a conductive layer.
Public/Granted literature
- US20180337276A1 HIGH VOLTAGE DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2018-11-22
Information query
IPC分类:
