- 专利标题: Ultrasonic transducer, method for making same, ultrasonic transducer array, and ultrasonic test apparatus
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申请号: US15513588申请日: 2015-04-21
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公开(公告)号: US10603689B2公开(公告)日: 2020-03-31
- 发明人: Shuntaro Machida , Daisuke Ryuzaki , Tatsuya Nagata , Naoaki Yamashita , Yuko Hanaoka , Yasuhiro Yoshimura
- 申请人: Hitachi, Ltd.
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2014-196805 20140926
- 国际申请: PCT/JP2015/062135 WO 20150421
- 国际公布: WO2016/047186 WO 20160331
- 主分类号: B06B1/06
- IPC分类号: B06B1/06 ; G01N29/24 ; G01N29/04 ; B06B1/02 ; H04R31/00 ; H04R19/00 ; A61B8/00
摘要:
A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.
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