公开(公告)号：US10336609B2

公开(公告)日：2019-07-02

申请号：US15610987

申请日：2017-06-01

Applicant: HITACHI, LTD.

Inventor： Keiji Watanabe ,  Shuntaro Machida ,  Katsuya Miura ,  Aki Takei ,  Tetsufumi Kawamura ,  Nobuyuki Sugii ,  Daisuke Ryuzaki

IPC: B81C1/00 ,  B05D3/06 ,  B81C99/00

Abstract: First, an ion beam is applied to a workpiece to form a tapered hole the side wall of which is inclined. Next, the application of the ion beam is stopped, and then a material gas is introduced from the gas source to the upper surface of the workpiece from an oblique direction to cause gas molecules to be adsorbed to the upper surface of the workpiece and to the upper portion of the side wall of the hole. Next, introduction of the material gas is stopped, and then the ion beam is applied again to the region of the workpiece where the hole is formed. As a result, at the upper portion of the side wall of the hole, film formation occurs using the gas molecules as the material adsorbed to the side wall of the hole, and, at the bottom portion of the hole, etching of the workpiece occurs.

公开(公告)号：US10603689B2

公开(公告)日：2020-03-31

申请号：US15513588

申请日：2015-04-21

Applicant: Hitachi, Ltd.

Inventor： Shuntaro Machida ,  Daisuke Ryuzaki ,  Tatsuya Nagata ,  Naoaki Yamashita ,  Yuko Hanaoka ,  Yasuhiro Yoshimura

IPC: B06B1/06 ,  G01N29/24 ,  G01N29/04 ,  B06B1/02 ,  H04R31/00 ,  H04R19/00 ,  A61B8/00

Abstract: A structure that prevents a substrate from being warped is provided on a region or a location other than a membrane that determines the characteristics of a CMUT. In a CMUT in a structure in which a first conductive layer and a second conductive layer are provided sandwiching a cavity on a substrate, for example, as a warpage prevention structure, a warpage prevention layer that prevents the substrate from being warped is provided between the substrate and the first conductive film. When the insulating film disposed between the cavity and the first conductive film and the insulating film disposed between the cavity and the second conductive film are silicon oxide films, the warpage prevention layer includes a silicon nitride film.

公开(公告)号：US10410826B2

公开(公告)日：2019-09-10

申请号：US16069796

申请日：2016-03-18

Applicant: HITACHI, LTD.

Inventor： Tetsufumi Kawamura ,  Misuzu Sagawa ,  Kazuki Watanabe ,  Keiji Watanabe ,  Shuntaro Machida ,  Nobuyuki Sugii ,  Daisuke Ryuzaki

IPC: H01J37/28 ,  H01J37/302 ,  H01J37/305 ,  H01L21/3065 ,  H01L21/66 ,  B81C1/00

Abstract: The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

公开(公告)号：US20180244517A1

公开(公告)日：2018-08-30

申请号：US15932194

申请日：2018-02-16

Applicant: Hitachi, Ltd.

Inventor： Hiroyasu Shichi ,  Keiji Watanabe ,  Daisuke Ryuzaki

IPC: B81C1/00 ,  H01J27/02 ,  H01L21/687

CPC classification number: B81C1/00341 ,  B81C1/00626 ,  B81C2201/0132 ,  H01J27/022 ,  H01J37/3005 ,  H01J37/3056 ,  H01J2237/31749 ,  H01L21/68714

Abstract: A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

公开(公告)号：US10546721B2

公开(公告)日：2020-01-28

申请号：US15914513

申请日：2018-03-07

Applicant: Hitachi, Ltd.

Inventor： Keiji Watanabe ,  Hiroyasu Shichi ,  Daisuke Ryuzaki

IPC: H01J37/317 ,  H01J37/04 ,  H01J37/30

Abstract: The present invention provides a technology for avoiding radiation of an ion beam at a position other than a desired processing position. A microstructure manufacturing method includes a step of radiating an ion beam to a sample; a step of supplying a gas to the sample; a step of stopping supplying the gas to the sample; and a step of stopping radiating the ion beam to the sample. The step of radiating the ion beam is performed earlier than the step of supplying the gas or the step of stopping supplying the gas is performed earlier than the step of stopping radiating the ion beam.

公开(公告)号：US11268937B2

公开(公告)日：2022-03-08

申请号：US16315676

申请日：2017-07-06

Applicant: HITACHI, LTD.

Inventor： Taiichi Takezaki ,  Shuntaro Machida ,  Daisuke Ryuzaki ,  Yasuhiro Yoshimura ,  Tatsuya Nagata ,  Naoaki Yamashita

IPC: H04R19/00 ,  G01N29/24 ,  G01N29/265 ,  A61B8/00 ,  B06B1/02

Abstract: A capacitive micromachined ultrasonic transducer 111A includes: a silicon substrate 101; an insulating film 102 formed over the silicon substrate 101; a lower electrode 103; insulating films 104 and 106; a cavity 105 constituted by a void formed in a portion of the insulating film 106; an upper electrode 107; insulating films 108 and 114; and a protective film 109. In addition, the insulating film 106, upper electrode 107, insulating film 108 and insulating film 114 above the cavity 105 configure a vibration film 110, and the protective film 109 above the vibration film 110 is divided into a plurality of isolated patterns regularly arranged with a gap 115 having a constant spacing formed therebetween.

公开(公告)号：US10549989B2

公开(公告)日：2020-02-04

申请号：US15932194

申请日：2018-02-16

Applicant: Hitachi, Ltd.

Inventor： Hiroyasu Shichi ,  Keiji Watanabe ,  Daisuke Ryuzaki

IPC: B81C1/00 ,  H01L21/687 ,  H01J27/02 ,  H01J37/305 ,  H01J37/30

Abstract: A sufficient processing speed and sufficient processing accuracy are obtained in a microstructure manufacturing method using ion beams. The microstructure manufacturing method includes the steps of: (a) irradiating a first region of a sample with a first ion beam (projection ion beam) formed by being passed through a first opening portion of a first mask, and etching the sample; and (b) irradiating a second region that is wider than the first region in a direction along a beam width, with a second ion beam (projection ion beam), and processing the sample. Furthermore, a magnitude of a skirt width of a longitudinal section of the second ion beam is smaller than a magnitude of a skirt width of a longitudinal section of the first ion beam.

公开(公告)号：US09857610B2

公开(公告)日：2018-01-02

申请号：US15311434

申请日：2014-06-19

Applicant: HITACHI, LTD.

Inventor： Hideo Arimoto ,  Kazuki Tani ,  Takashi Takahama ,  Daisuke Ryuzaki ,  Yoshitaka Sasago

IPC: G02F1/025 ,  G02F1/225 ,  G02F1/015 ,  G02F1/21

CPC classification number: G02F1/025 ,  G02F1/2257 ,  G02F2001/0151 ,  G02F2001/212 ,  G02F2202/104

Abstract: In an optical modulator 115 of an embodiment, an optical waveguide core 121 is configured from an n− type semiconductor region 134, a gate insulating film 136 on the n− type semiconductor region 134, and a p− type semiconductor region 137 on the gate insulating film 136. Further, a width W1 of the n− type semiconductor region 134 and a width W1 of the p− type semiconductor region 137 are equally formed and are layered without being shifted. Therefore, an optical modulator having stable optical characteristics can be provided.

公开(公告)号：US11181441B2

公开(公告)日：2021-11-23

申请号：US16193003

申请日：2018-11-16

Applicant: Hitachi, Ltd.

Inventor： Keiji Watanabe ,  Hiroaki Hasegawa ,  Hisanori Matsumoto ,  Daisuke Ryuzaki

IPC: G01M13/00 ,  G01D5/12 ,  G01H1/00 ,  G01D5/48 ,  G01D5/34

Abstract: A sensor system that detects a vibration of a rotating part with a high accuracy even in a case in which a sensor is additionally attached is provided. The invention is directed to a sensor system includes a board that is installed in a rotating part of a cut processing machine; a plurality of acceleration sensors mounted on the board, and a signal processing unit (arithmetic operation). The signal processing unit detects a translational acceleration accompanying moving of the rotating part and a centrifugal acceleration accompanying rotation of the rotating part on the basis of acceleration data detected by each of the acceleration sensors.

公开(公告)号：US10751027B2

公开(公告)日：2020-08-25

申请号：US15325489

申请日：2015-06-19

Applicant: Hitachi, Ltd.

Inventor： Taiichi Takezaki ,  Shuntaro Machida ,  Daisuke Ryuzaki

IPC: A61B8/00 ,  G01B17/02 ,  B06B1/02 ,  G01B21/04 ,  A61B8/08 ,  G01B7/14

Abstract: Technique that enables precisely measuring cavity height and precisely grasping maximum transmission sound pressure in an ultrasonic probe is provided to the ultrasonic probe using CMUT. The ultrasonic probe according to the present invention includes plural cells each of which includes a lower electrode and an upper electrode arranged via a gap with respect to the lower electrode, and the plural cells include an ultrasonic cell the gap of which is void and which transmits/receives an ultrasonic wave and a reference cell the gap of which is filled with a conductive material. Electrostatic capacity of the ultrasonic cell and the reference cell is measured, parasitic capacity included in the measured electrostatic capacity as to the ultrasonic cell is corrected using parasitic capacity included in the measured electrostatic capacity as to the reference cell, and cavity height is calculated on the basis of the corrected electrostatic capacity of the ultrasonic cell.