Invention Grant
- Patent Title: Guided inspection of a semiconductor wafer based on systematic defects
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Application No.: US16022566Application Date: 2018-06-28
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Publication No.: US10605745B2Publication Date: 2020-03-31
- Inventor: Yotam Sofer , Boaz Cohen , Saar Shabtay , Eli Buchman
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee: APPLIED MATERIALS ISRAEL LTD.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01N21/956

Abstract:
A candidate defect may be identified at a semiconductor wafer. A determination may be made as to whether the candidate defect at the semiconductor wafer corresponds to a systematic defect or a random defect. In response to determining that the candidate defect at the semiconductor wafer corresponds to a systematic detect, the candidate defect at the semiconductor wafer may be provided to a defect review tool for review by the defect review tool.
Public/Granted literature
- US20200003700A1 GUIDED INSPECTION OF A SEMICONDUCTOR WAFER BASED ON SYSTEMATIC DEFECTS Public/Granted day:2020-01-02
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