Invention Grant
- Patent Title: Gas flow control for EPI thickness uniformity improvement
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Application No.: US15682171Application Date: 2017-08-21
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Publication No.: US10607837B2Publication Date: 2020-03-31
- Inventor: Masato Ishii
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; H01L21/205 ; H01L21/67 ; H01L21/02 ; H01L21/268

Abstract:
One implementation provides a method including providing a substrate into a processing chamber through a loading port, rotating the substrate clockwise, providing a gas mixture into a processing region through an inject insert comprising a first, second, and third sets of inject inlets, wherein the first set of inject inlets creates an inner zone inside the processing region, the second set of inject inlets creates a middle zone radially outward of the inner zone, and the third set of inject inlets creates an outer zone radially outward the middle zone, the gas mixture is provided by flowing the gas mixture through the first and second sets of inject inlets, and inject inlets of the third set of inject inlets that are away from the loading port, while blocking flow of the gas mixture into inject inlets of the third set of inject inlets that are closer to the loading port.
Public/Granted literature
- US20180053653A1 GAS FLOW CONTROL FOR EPI THICKNESS UNIFORMITY IMPROVEMENT Public/Granted day:2018-02-22
Information query
IPC分类: