Invention Grant
- Patent Title: Tunnel magnetoresistive effect element, magnetic memory, and built-in memory
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Application No.: US16082914Application Date: 2017-11-08
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Publication No.: US10607898B2Publication Date: 2020-03-31
- Inventor: Zhenyao Tang , Tomoyuki Sasaki
- Applicant: TDK CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- International Application: PCT/JP2017/040293 WO 20171108
- International Announcement: WO2019/092816 WO 20190516
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L21/8239 ; G01R33/09 ; H01L27/105 ; H01L27/22 ; H01L43/08 ; H01L43/10
Abstract:
A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
Public/Granted literature
- US20190279907A1 TUNNEL MAGNETORESISTIVE EFFECT ELEMENT, MAGNETIC MEMORY, AND BUILT-IN MEMORY Public/Granted day:2019-09-12
Information query
IPC分类:
