- 专利标题: Increased contact alignment tolerance for direct bonding
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申请号: US16388692申请日: 2019-04-18
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公开(公告)号: US10607937B2公开(公告)日: 2020-03-31
- 发明人: Paul M. Enquist , Gaius Gillman Fountain, Jr. , Javier A. DeLaCruz
- 申请人: INVENSAS BONDING TECHNOLOGIES, INC.
- 申请人地址: US CA San Jose
- 专利权人: Invensas Bonding Technologies, Inc.
- 当前专利权人: Invensas Bonding Technologies, Inc.
- 当前专利权人地址: US CA San Jose
- 代理机构: Knobbe, Martens, Olson & Bear, LLP
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L25/065 ; H01L23/00 ; H01L25/00 ; H01L21/768 ; H01L23/522
摘要:
A bonded device structure including a first substrate having a first set of conductive contact structures, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the contact structures on the first substrate, a second substrate having a second set of conductive contact structures, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the contact structures on the second substrate, and a contact-bonded interface between the first and second set of contact structures formed by contact bonding of the first non-metallic region to the second non-metallic region. The contact structures include elongated contact features, such as individual lines or lines connected in a grid, that are non-parallel on the two substrates, making contact at intersections. Alignment tolerances are thus improved while minimizing dishing and parasitic capacitance.
公开/授权文献
- US20190244899A1 INCREASED CONTACT ALIGNMENT TOLERANCE FOR DIRECT BONDING 公开/授权日:2019-08-08
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