- 专利标题: Semiconductor device
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申请号: US15061989申请日: 2016-03-04
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公开(公告)号: US10607964B2公开(公告)日: 2020-03-31
- 发明人: Shinya Fukayama , Yukifumi Oyama , Keisuke Taniguchi
- 申请人: TOSHIBA MEMORY CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人: TOSHIBA MEMORY CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Kim & Stewart LLP
- 优先权: JP2015-110524 20150529
- 主分类号: H01L29/49
- IPC分类号: H01L29/49 ; H01L25/065 ; H01L23/00
摘要:
A semiconductor device includes a semiconductor chip in which a first bump is provided on a first surface, a plurality of first adhesives are provided on the first surface of the semiconductor chip, and a second adhesive is provided on the first surface of the semiconductor chip, and of which a layout area on the first surface is smaller than a layout area of the plurality of first adhesives. In comparison to a first adhesive that is farthest from the center or a moment of inertia of the first surface of the semiconductor chip among the plurality of the first adhesives, the second adhesive is provided farther from the center or the moment of inertia of the semiconductor chip.
公开/授权文献
- US20160351541A1 SEMICONDUCTOR DEVICE 公开/授权日:2016-12-01
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