Invention Grant
- Patent Title: Semiconductor device and method of forming the same
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Application No.: US15873904Application Date: 2018-01-18
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Publication No.: US10608093B2Publication Date: 2020-03-31
- Inventor: Chia-Wei Wu , Ting-Pang Chung , Tien-Chen Chan , Shu-Yen Chan
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710058332 20170123
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L27/108 ; H01L27/12 ; H01L21/02 ; H01L29/49 ; H01L29/08 ; H01L29/06 ; H01L27/11568 ; H01L27/11578
Abstract:
A semiconductor device and a method of forming the same are disclosed. First, a substrate having a main surface is provided. At least a trench is formed in the substrate. A barrier layer is formed in the trench and a conductive material is formed on the barrier layer and filling up the trench. The barrier layer and the conductive material are then recessed to be lower than the upper surface of the substrate. After that, an oxidation process is performed to oxidize the barrier layer and the conductive material thereby forming an insulating layer.
Public/Granted literature
- US20180212030A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME Public/Granted day:2018-07-26
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