Invention Grant
- Patent Title: Graded interconnect cap
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Application No.: US15911313Application Date: 2018-03-05
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Publication No.: US10651083B2Publication Date: 2020-05-12
- Inventor: Andrew Tae Kim , Baozhen Li , Ernest Y. Wu , Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: ZIP Group PLLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/768 ; H01L23/532

Abstract:
A graded cap is formed upon an interconnect, such as a back end of line wire. The graded cap includes a microstructure that uniformly changes from a metal nearest the interconnect to a metal nitride most distal from the interconnect. The graded cap is formed by nitriding a metal cap that is formed upon the interconnect. During nitriding an exposed one or more perimeter portions of the metal cap become a metal nitride with a larger amount or concentration of Nitrogen while one or more inner portions of the metal cap nearest the interconnect may be maintained as the metal or become the metal nitride with a fewer amount or concentration of Nitrogen. The resulting graded cap includes a gradually or uniformly changing microstructure between the one or more inner portions and the one or more perimeter portions.
Public/Granted literature
- US20190273022A1 GRADED INTERCONNECT CAP Public/Granted day:2019-09-05
Information query
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