- Patent Title: P-type field effect transistor and method for fabricating the same
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Application No.: US15893681Application Date: 2018-02-11
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Publication No.: US10651275B2Publication Date: 2020-05-12
- Inventor: Shi-You Liu , Tsai-Yu Wen , Ching-I Li , Ya-Yin Hsiao , Chih-Chiang Wu , Yu-Chun Liu , Ti-Bin Chen , Shao-Ping Chen , Huan-Chi Ma , Chien-Wen Yu
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@8dc53cf
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/78 ; H01L29/66 ; H01L21/324 ; H01L21/265 ; H01L21/8234
Abstract:
A method for fabricating p-type field effect transistor (FET) includes the steps of first providing a substrate, forming a pad layer on the substrate, forming a well in the substrate, performing an ion implantation process to implant germanium ions into the substrate to form a channel region, and then conducting an anneal process to divide the channel region into a top portion and a bottom portion. After removing the pad layer, a gate structure is formed on the substrate and a lightly doped drain (LDD) is formed adjacent to two sides of the gate structure.
Public/Granted literature
- US20190214465A1 P-TYPE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2019-07-11
Information query
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