Invention Grant
- Patent Title: Method of manufacturing a memory device
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Application No.: US15878036Application Date: 2018-01-23
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Publication No.: US10651376B2Publication Date: 2020-05-12
- Inventor: Sophie Bernasconi , Christelle Charpin-Nicolle , Aomar Halimaoui
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS (CROLLES 2) SAS
- Applicant Address: FR Paris FR Crolles
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS (CROLLES 2) SAS
- Current Assignee Address: FR Paris FR Crolles
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@e2c6013
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L21/02 ; G11C13/00
Abstract:
The present invention relates to a memory device comprising a first electrode (27), a second electrode (28) and an active portion that can change conductive state, positioned between a first face of the first electrode (27) and a first face of the second electrode (28).The first electrode (27) comprises an upper portion forming the first face of the first electrode (27). At least one out of the upper portion and the active portion that can change conductive state comprises a porous layer (15).
Public/Granted literature
- US20180254414A1 METHOD OF MANUFACTURING A MEMORY DEVICE Public/Granted day:2018-09-06
Information query
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