Invention Grant
- Patent Title: Resistorless power amplifier
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Application No.: US15887635Application Date: 2018-02-02
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Publication No.: US10651796B2Publication Date: 2020-05-12
- Inventor: Jaw-Ming Ding
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/19 ; H03F3/21 ; H04B1/04

Abstract:
The present disclosure relates to a power amplifier circuit including a current source, a power control circuit, a current mirror and an output circuit. The current source circuit includes a first transistor and a second transistor. A source of the first transistor is connected to a drain of the second transistor and a gate of the first transistor is connected to a source with the second transistor. The power control circuit is connected to a gate of the second transistor. The current mirror circuit is connected to the gate of the first transistor and a source of the second transistor. The output circuit is connected to the current mirror circuit.
Public/Granted literature
- US20190245488A1 RESISTORLESS POWER AMPLIFIER Public/Granted day:2019-08-08
Information query
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